{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB051NE8NG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB051NE8NG","canonicalUrl":"https://icboms.com/infineon/IPB051NE8NG","factsUrl":"https://icboms.com/api/mcp/products/IPB051NE8NG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™2 IPB051NE8NG, N-Channel MOSFET, 85 V Vdss, 5.1 mOhm Rds(on) @ 100 A, 10 V, 180 nC gate charge, TO-263-3 (D²Pak), -55 to 175 °C.","salesMarkdown":"## Gate charge and switching — what the driver sees Total gate charge is 180 nC at 10 V, and input capacitance (Ciss) is 12100 pF at 40 V drain — a combination that demands a gate driver capable of sourcing several amperes peak to hit fast switching edges. The maximum gate-source voltage is ±20 V, so a standard 10 V or 12 V gate drive rail is safe; the threshold voltage is 4 V max at 250 µA drain current. ## Package and thermal budget Housed in a TO-263-3 (D²Pak) surface-mount package (PG-TO263-3-2), the part dissipates up to 300 W at the case, but the real thermal limit depends on the PCB copper area under the tab.","metaTitle":"IPB051NE8NG N-Channel MOSFET, 85 V, 5.1 mOhm, TO-263","metaDescription":"Infineon IPB051NE8NG OptiMOS™2 N-channel MOSFET, 85 V Vdss, 5.1 mOhm Rds(on) at 100 A, 180 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™2","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"5.1mOhm @ 100A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"180 nC @ 10 V","Drain to Source Voltage (Vdss)":"85 V","Input Capacitance (Ciss) (Max) @ Vds":"12100 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.52","priceTiers":[{"qty":198,"price":"$1.52000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7326f336660307b7b12f9f245173fe0e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPB051NE8NG/alternatives.json"},"ai":{"faq":[{"question":"What is the gate charge of IPB051NE8NG?","answer":"Total gate charge (Qg) is 180 nC at 10 V gate-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB051NE8NG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB051NE8NG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}