{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB043N10NF2SATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB043N10NF2SATMA1","canonicalUrl":"https://icboms.com/infineon/IPB043N10NF2SATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB043N10NF2SATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ 2, N-Channel MOSFET, 100V Vdss, 4.35mOhm Rds(on) at 80A, 10V, 135A continuous drain current at Tc, PG-TO263-3, -55°C to 175°C junction temperature.","salesMarkdown":"## 100V N-channel with 4.35 mOhm Rds(on) — the conduction loss floor The IPB043N10NF2SATMA1: This is the part's defining parametric — the Rds(on) at the operating point sets the conduction loss for the power path. The 135 A continuous drain current at the case temperature (Tc) tells you the package and die can handle high steady-state current, but the junction-to-case thermal path in the PG-TO263-3 package is what makes that rating real: the 167 W power dissipation at Tc is the thermal budget ceiling for the heatsink design. ## Gate charge and switching drive budget Total gate charge is 85 nC at 10 V. The input capacitance is 4000 pF at 50 V Vds. ## Automotive-grade temperature envelope The 175 °C TJ max is the ceiling for the die attach and mold compound; the 3.8 W at ambient (Ta) power dissipation is the free-air limit with no heatsink — useful for low-duty-cycle or fault-condition checks. The threshold voltage of 3.8 V maximum at 93 µA drain current gives the turn-on margin for a 10 V gate drive, but at 6 V drive the Rds(on) is higher per the drive voltage spec.","metaTitle":"Infineon IPB043N10NF2SATMA1 N-Channel MOSFET, 100V, 4.35mOhm","metaDescription":"Infineon StrongIRFET™ 2 N-channel MOSFET, 100V Vdss, 4.35mOhm Rds(on) at 80A, 10V. 135A continuous drain current. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"StrongIRFET™ 2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"StrongIRFET™ 2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 93µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.35mOhm @ 80A, 10V","Power Dissipation (Max)":"3.8W (Ta), 167W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"85 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4000 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"21A (Ta), 135A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.95","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.95000","currency":"USD"},{"qty":10,"price":"$1.62100","currency":"USD"},{"qty":100,"price":"$1.29040","currency":"USD"},{"qty":800,"price":"$1.09189","currency":"USD"},{"qty":1600,"price":"$0.92645","currency":"USD"},{"qty":2400,"price":"$0.88013","currency":"USD"},{"qty":5600,"price":"$0.84704","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3273bf914e811f5560d11238884f01a6.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB043N10NF2SATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB043N10NF2SATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}