{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB03N03LAG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB03N03LAG","canonicalUrl":"https://icboms.com/infineon/IPB03N03LAG","factsUrl":"https://icboms.com/api/mcp/products/IPB03N03LAG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IPB03N03LAG OptiMOS N-Channel Power MOSFET, 25 V Vdss, 80 A Id, 2.7 mOhm Rds(on) at 10 V, 57 nC Qg, TO-263-3 D²Pak, -55°C to 175°C.","salesMarkdown":"Its headline rating is a 2.7 mOhm maximum on-resistance at 55 A with a 10 V gate drive, which puts it in the low-Rds(on) bracket for a 25 V part. The 57 nC gate charge at 5 V tells you it switches fast enough for medium-frequency DC-DC converters and motor drives, but the 7027 pF input capacitance at 15 V means you need a gate driver with decent peak current — don't try to drive it directly from a logic pin. Package is the TO-263-3 (D²Pak, Infineon's PG-TO263-3-2 variant), a surface-mount tabbed package that handles the 150 W dissipation at the case — bolt it to a heatsink or a copper plane. ## Gate drive and switching — what the numbers mean At 4.5 V the Rds(on) will be higher than the 2.7 mOhm spec (which is quoted at 10 V). The TO-263-3 (D²Pak) is a surface-mount package with a large exposed metal tab — the drain connection. It is an Infineon OptiMOS part, so it is widely distributed and second-sourced through the independent channel.","metaTitle":"Infineon IPB03N03LAG N-Channel Power MOSFET, 25 V, 80 A","metaDescription":"Infineon IPB03N03LAG OptiMOS N-channel power MOSFET, 25 V Vdss, 80 A Id, 2.7 mOhm Rds(on) at 10 V. TO-263-3 D²Pak. Active, RoHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 100µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.7mOhm @ 55A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"57 nC @ 5 V","Drain to Source Voltage (Vdss)":"25 V","Input Capacitance (Ciss) (Max) @ Vds":"7027 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.93","priceTiers":[{"qty":322,"price":"$0.93000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e1712c6c31eb19f6d24aec6d9ef9fd7d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPB03N03LAG/alternatives.json"},"ai":{"faq":[{"question":"Is IPB03N03LAG suitable for high-frequency switching?","answer":"The 57 nC gate charge at 5 V and 7027 pF input capacitance at 15 V make this part suitable for medium-frequency switching up to about 50 kHz in hard-switched topologies. For high-frequency switching above 100 kHz, the switching losses from the Miller plateau will be significant — consider a MOSFET with lower gate charge and input capacitance for that application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB03N03LAG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB03N03LAG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}