{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB020N08N5ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB020N08N5ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB020N08N5ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB020N08N5ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS series, IPB020N08N5ATMA1, N-Channel MOSFET, 80V Vdss, 120A Id, 2mOhm Rds(on) at 10V, 166nC Qg, -55°C to 175°C, PG-TO263-3.","salesMarkdown":"## 80 V rail with headroom — what the ratings mean The 80 V Vdss rating puts this squarely in the 48 V bus and 60 V battery-voltage class with derating margin for transients. The 2 mOhm Rds(on) at 10 V means that at 100 A load the conduction loss is just 20 W — that keeps the junction rise manageable in a TO-263 package, provided the PCB copper area under the tab is sized for the 300 W power dissipation ceiling. Gate charge is 166 nC at 10 V. That is a moderate figure for a 120 A device — the driver needs to source about 1.66 A peak to hit a 100 ns switching edge. The input capacitance at 40 V drain is 12100 pF, which sets the Coss-related switching loss in a hard-switched converter. The gate threshold maximum is 3.8 V at 208 µA, so a 5 V logic gate drive will turn it on, but the 10 V drive is needed to reach the rated 2 mOhm. That makes it a candidate for under-hood automotive or high-ambient industrial enclosures where the case temperature can push past 125°C. ## PG-TO263-3 package — rework and layout notes The part comes in a PG-TO263-3 (D²Pak) surface-mount package. The large exposed tab is the drain — it needs a solid copper pour on the PCB with thermal vias to the backside plane to pull the heat out. The tab is also the primary electrical connection for the drain current, so the solder joint area must be void-free. Under a hot-air station the tab soaks heat; preheat the board to 125°C before attempting removal, and use a wide nozzle. The three leads are robust enough for hand rework if the tab is pre-tinned. ## Sourcing and BOM fit It is quoted to order against the BOM quantity — no LTB risk, no broker scramble. For dual-sourcing, the Infineon OptiMOS family includes other 80 V N-channel devices in the same package, but the 2 mOhm Rds(on) tier is specific to this variant — confirm the electrical spec before substituting.","metaTitle":"Infineon IPB020N08N5ATMA1 OptiMOS N-Ch 80V 120A MOSFET","metaDescription":"Infineon IPB020N08N5ATMA1 OptiMOS N-channel MOSFET, 80V Vdss, 120A Id, 2mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 208µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2mOhm @ 100A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"166 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"12100 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.18","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.18000","currency":"USD"},{"qty":10,"price":"$4.34500","currency":"USD"},{"qty":100,"price":"$3.51530","currency":"USD"},{"qty":500,"price":"$3.12470","currency":"USD"},{"qty":1000,"price":"$2.67552","currency":"USD"},{"qty":2000,"price":"$2.51929","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fccf156cb874bcfc277b4bf271589913.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPB020N08N5ATMA1?","answer":"The maximum on-resistance is 2 mOhm at 100 A drain current with 10 V gate drive. That is the rated maximum at 25°C junction; at higher junction temperatures the Rds(on) increases per the typical curve in the datasheet."},{"question":"What is the gate charge of IPB020N08N5ATMA1?","answer":"The maximum total gate charge is 166 nC at 10 V gate drive. This figure determines the driver current required for a given switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB020N08N5ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB020N08N5ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}