{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB019N06L3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB019N06L3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPB019N06L3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB019N06L3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPB019N06L3GATMA1, N-Channel MOSFET, 60 V Vdss, 120 A Id, 1.9 mOhm Rds(on) @ 10 V, 250 W, D²Pak (TO-263), -55 to 175 °C.","salesMarkdown":"## Gate charge and switching — what the 166 nC Qg means for the driver budget Total gate charge is 166 nC at 4.5 V, with the drive voltage window specified from 4.5 V to 10 V for minimum and maximum Rds(on). At a 100 kHz switching frequency, the average gate-drive current required is 166 nC × 100 kHz = 16.6 mA; at 500 kHz it rises to 83 mA. The driver must also supply the peak current to charge the 28 000 pF input capacitance (Ciss) at 30 V Vds during the Miller plateau — a weak on-chip driver from a 3.3 V MCU will not cleanly saturate the gate, so budget a dedicated gate-driver IC rated for at least 2 A peak sink/source. ## 175 °C junction — the thermal budget for the D²Pak copper island The 250 W power dissipation at case temperature assumes the tab is soldered to a 1 oz copper pad of at least 6 cm² on a 2-layer board; with a 22.8 W conduction loss at 120 A and a typical RthJC of 0.4 °C/W, the junction rises about 9 °C above the case. The margin to the 175 °C limit is the headroom for switching losses and ambient temperature.","metaTitle":"Infineon IPB019N06L3GATMA1 N-Channel MOSFET, 60 V, 120 A","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 60 V Vdss, 120 A continuous drain, 1.9 mOhm max Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 196µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.9mOhm @ 100A, 10V","Power Dissipation (Max)":"250W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"166 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"28000 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.29","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.29000","currency":"USD"},{"qty":10,"price":"$2.76300","currency":"USD"},{"qty":100,"price":"$2.23540","currency":"USD"},{"qty":500,"price":"$1.98704","currency":"USD"},{"qty":1000,"price":"$1.70140","currency":"USD"},{"qty":2000,"price":"$1.60205","currency":"USD"},{"qty":5000,"price":"$1.53700","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/IPB019N06L3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e2600a49e467b","sourceUrl":null},"ai":{"faq":[{"question":"Is IPB019N06L3GATMA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant per the Infineon lifecycle record."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB019N06L3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB019N06L3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}