{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPAW60R280CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPAW60R280CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPAW60R280CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPAW60R280CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPAW60R280CEXKSA1, N-Channel Super Junction MOSFET, 600 V, 280 mOhm @ 6.5 A, 10 V, 19.3 A, PG-TO220 Full Pack, Through Hole, -40 to 150 °C.","salesMarkdown":"The 600 V drain-source voltage gives you headroom for universal-input (85–265 VAC) offline converters with derating for ringing on the drain node. The 280 mOhm Rds(on) at 10 V gate drive sets the conduction loss — at 6.5 A you are looking at roughly 12 W dissipation in the channel alone, which the 32 W package limit can handle with a good heatsink. Gate charge is 43 nC at 10 V, so the driver sees a moderate capacitive load; a standard 1 A gate-driver IC will switch it cleanly in the 50–100 kHz range. Input capacitance of 950 pF at 100 V Vds keeps the Miller plateau manageable. Infineon lists the IPAW60R280CEXKSA1 as obsolete. For BOM lines that already specify this part, the supply path runs through independent distribution — surplus inventory, last-time-buy stock, or broker-sourced material.","metaTitle":"IPAW60R280CEXKSA1 CoolMOS N-Ch 600 V 280 mOhm MOSFET","metaDescription":"Infineon IPAW60R280CEXKSA1 CoolMOS N-channel 600 V, 280 mOhm, 19.3 A superjunction MOSFET in PG-TO220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Super Junction","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack, Variant","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 430µA","Base Product Number":"IPAW60","Operating Temperature":"-40°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220 Full Pack, Wide Creepage","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"950 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"19.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bd0680040fe6d38020aee53d26529ffd.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IPAW60R280CEXKSA1?","answer":"Infineon has not published a direct successor order code for this part. For new designs, look at current CoolMOS CE or P7 series 600 V N-channel MOSFETs in the PG-TO220 Full Pack package with similar Rds(on) — many share the same footprint and pinout, but verify the gate drive and capacitance match your switching frequency."},{"question":"Where can I buy IPAW60R280CEXKSA1?","answer":"Because the part is obsolete, it is not available through standard factory distribution. We source it through independent supply channels — submit an RFQ and we will confirm availability and current pricing at quote time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPAW60R280CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPAW60R280CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}