{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPAW60R190CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPAW60R190CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPAW60R190CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPAW60R190CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPAW60R190CEXKSA1, N-channel MOSFET, 600 V drain-source, 190 mOhm on-resistance at 10 V gate drive, 26.7 A continuous drain current, TO-220 Full Pack through-hole package, -40°C to 150°C junction temperature.","salesMarkdown":"## 600 V CoolMOS™ in a fully isolated TO-220 It is designed for hard-switching topologies such as power factor correction (PFC) stages, flyback converters, and switched-mode power supplies where high-voltage capability and low conduction losses are required. ## Key ratings for the design The 600 V drain-source rating gives headroom for 400 VDC bus rails in single-phase PFC designs, with margin for switching transients. The 190 mOhm Rds(on) at 10 V gate drive sets a baseline for conduction loss: at 9.5 A, expect about 17 W dissipation from the channel alone. Gate charge is 63 nC at 10 V, which influences driver sizing and switching losses at higher frequencies. Input capacitance is 1400 pF at 100 V Vds, a moderate figure that keeps gate drive energy manageable. The IPAW60R190CEXKSA1 is marked as Obsolete by Infineon. Buyers filling a BOM line for this part will need to source through independent distribution or surplus channels.","metaTitle":"Infineon IPAW60R190CEXKSA1 CoolMOS™ N-Channel MOSFET, 600 V","metaDescription":"Infineon IPAW60R190CEXKSA1 CoolMOS™ N-channel MOSFET, 600 V, 190 mOhm Rds(on), 26.7 A, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 630µA","Base Product Number":"IPAW60","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9.5A, 10V","Power Dissipation (Max)":"34W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1400 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"26.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/aeb5a9f751e1c747ab9966098f033767.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IPAW60R190CEXKSA1?","answer":"A parametric search for a 600 V, 190 mOhm N-channel MOSFET in a TO-220 Full Pack from Infineon's current CoolMOS™ portfolio is the recommended approach for finding a pin-compatible alternative."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPAW60R190CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPAW60R190CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}