{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPAW60R180P7SXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPAW60R180P7SXKSA1","canonicalUrl":"https://icboms.com/infineon/IPAW60R180P7SXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPAW60R180P7SXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPAW60R180P7SXKSA1, N-Channel MOSFET, 650V Vdss, 18A Id, 180mOhm Rds(on) at 10V, TO-220-3 Full Pack, -55°C to 150°C.","salesMarkdown":"## 650 V, 18 A, 180 mOhm — what the CoolMOS P7 delivers The IPAW60R180P7SXKSA1: The 180 mOhm maximum on-resistance is specified at a 10 V gate drive with 5.6 A Id. ## NRND — plan the last buy now Infineon is not actively promoting it for new projects. ## Gate charge and input capacitance — sizing the driver ## Full military temperature range — where it fits The TO-220 Full Pack isolates the tab electrically — no insulating pad needed.","metaTitle":"IPAW60R180P7SXKSA1 CoolMOS P7 N-Ch 650V 18A MOSFET, NRND","metaDescription":"Infineon IPAW60R180P7SXKSA1 is a 650V, 18A N-channel CoolMOS P7 MOSFET in TO-220 Full Pack. 180mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":"CoolMOS™ P7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 280µA","Base Product Number":"IPAW60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"180mOhm @ 5.6A, 10V","Power Dissipation (Max)":"26W (Tc)","Supplier Device Package":"PG-TO220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1081 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7600","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.45000","currency":"USD"},{"qty":10,"price":"$2.20500","currency":"USD"},{"qty":100,"price":"$1.77210","currency":"USD"},{"qty":500,"price":"$1.45592","currency":"USD"},{"qty":1000,"price":"$1.21328","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"Is IPAW60R180P7SXKSA1 obsolete?","answer":"Plan for a last-time-buy or identify a current-series replacement before the EOL notice arrives."},{"question":"What is the replacement for IPAW60R180P7SXKSA1?","answer":"No official successor is listed on the record. The current CoolMOS P7 and CFD7 families offer parts with similar voltage and Rds(on) ratings in the same TO-220 Full Pack package — cross-reference the gate charge and capacitance specs against your switching frequency to pick the closest drop-in."},{"question":"What is the Rds(on) of IPAW60R180P7SXKSA1?","answer":"180 mOhm maximum at Vgs = 10 V and Id = 5.6 A. This is the on-resistance at the typical operating point for a 650 V FET in a 300–500 W power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPAW60R180P7SXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPAW60R180P7SXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}