{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPAN80R280P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPAN80R280P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPAN80R280P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPAN80R280P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, N-Channel MOSFET, 800 V Vdss, 17 A Id, 280 mOhm Rds(on) at 10 V, PG-TO220-3 Full Pack, Through Hole, -55 to 150 °C.","salesMarkdown":"The Infineon IPAN80R280P7XKSA1 is an 800 V N-channel MOSFET from the CoolMOS P7 series, built for high-voltage power conversion. The PG-TO220-3-FP full-pack package has an isolated tab, so the heatsink does not need an insulating pad or mica washer, which simplifies assembly and cuts a line item from the BOM. ## 280 mOhm Rds(on) and 36 nC gate charge — the switching-loss tradeoff For a 10 V gate drive design, the FET is fully enhanced across the load range. ## PG-TO220-3-FP full-pack — mounting and thermal management The PG-TO220-3-FP is a through-hole full-pack variant of the standard TO-220. The plastic body fully encapsulates the backside tab, so the tab is electrically isolated from the drain. The maximum power dissipation is 30 W at the case, and the junction-to-case thermal path is the limiting factor; a good thermal interface to a heatsink is still required above a few watts of continuous dissipation. The base product number is IPAN80, which covers the P7 series variants in this voltage and package family.","metaTitle":"Infineon IPAN80R280P7XKSA1 CoolMOS P7 N-Ch MOSFET, 800 V","metaDescription":"Infineon IPAN80R280P7XKSA1 CoolMOS P7 N-channel MOSFET, 800 V Vdss, 280 mOhm Rds(on), 17 A Id, PG-TO220-3-FP. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 360µA","Base Product Number":"IPAN80","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 7.2A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"PG-TO220-3-FP","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1200 pF @ 500 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPAN80R280P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPAN80R280P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}