{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPAN60R280PFD7SXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPAN60R280PFD7SXKSA1","canonicalUrl":"https://icboms.com/infineon/IPAN60R280PFD7SXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPAN60R280PFD7SXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ series, N-Channel MOSFET, 600 V drain-source, 12 A continuous drain at 25°C, 280 mOhm Rds(on) at 10 V, PG-TO220-FP full-pack through-hole package, -40 to 150°C junction temperature.","salesMarkdown":"The Infineon IPAN60R280PFD7SXKSA1 is an OptiMOS N-channel power MOSFET rated for 600 V drain-source breakdown and 12 A continuous drain current at a 25°C case temperature. This combination targets offline flyback converters, PFC stages, and auxiliary power supplies operating from a 400 V DC-link bus. Total gate charge is 15.3 nC at 10 V, with an input capacitance of 656 pF measured at 400 V drain-source. These figures place the switching loss well below that of older-generation 600 V planar MOSFETs. The low Qg also lets a smaller, cheaper gate-driver IC handle the turn-on edge without excessive cross-conduction. ## Full-pack package — no isolation hardware needed The PG-TO220-FP (full-pack) case is a fully moulded, isolated TO-220 variant. The metal tab is encapsulated, so the MOSFET can be bolted directly to a grounded heatsink without a silicone pad or mica washer. This saves one assembly step and eliminates the thermal resistance of the interface material. ## Temperature range and application environment The 4.5 V maximum gate threshold at 180 µA drain current means the device will not fully enhance with a 3.3 V logic-level gate signal — a 10 V gate drive rail is expected for the rated Rds(on).","metaTitle":"IPAN60R280PFD7SXKSA1 Infineon OptiMOS N-Ch 600 V 12 A MOSFET","metaDescription":"Infineon IPAN60R280PFD7SXKSA1 OptiMOS N-channel MOSFET, 600 V, 12 A, 280 mOhm Rds(on), PG-TO220-FP. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 180µA","Base Product Number":"IPAN60R","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 3.6A, 10V","Power Dissipation (Max)":"24W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"15.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"656 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5100","priceTiers":[{"qty":1,"price":"$2.11000","currency":"USD"},{"qty":10,"price":"$1.89800","currency":"USD"},{"qty":100,"price":"$1.52590","currency":"USD"},{"qty":500,"price":"$1.25370","currency":"USD"},{"qty":1000,"price":"$1.04475","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/098585253ee5f69df231eaaa18e7546f.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPAN60R280PFD7SXKSA1/alternatives.json"},"ai":{"faq":[{"question":"Is IPAN60R280PFD7SXKSA1 RoHS compliant?","answer":"Yes, it is rated ROHS3 compliant."},{"question":"What is the equivalent or replacement for IPAN60R280PFD7SXKSA1?","answer":"No official Infineon cross-reference or pin-compatible replacement is listed for this order code. The peer IPD50R950CEAUMA1 is a 500 V, 950 mOhm CoolMOS CE device in a surface-mount DPAK — it is not a direct functional substitute due to the lower voltage rating, higher on-resistance, and different package. For a drop-in replacement, verify the target circuit's voltage, current, and gate-drive requirements against the 600 V, 280 mOhm, TO-220FP footprint of this part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPAN60R280PFD7SXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPAN60R280PFD7SXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}