{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA95R750P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA95R750P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA95R750P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA95R750P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPA95R750P7XKSA1, N-Channel MOSFET, 950 V Vdss, 750 mOhm Rds(on) at 4.5 A, 10 V gate drive, 23 nC gate charge, 9 A continuous drain, TO-220 Full Pack through-hole, -55 to 150 °C.","salesMarkdown":"The Infineon IPA95R750P7XKSA1 is a 950 V N-channel MOSFET from the CoolMOS P7 series, built in a through-hole TO-220 Full Pack (PG-TO220-FP) package. The 950 V drain-source rating gives real margin in 380 V DC-link PFC stages and universal-input flyback converters where 800 V bus transients are common — you are not running the part at its ceiling. The CoolMOS series is a current-generation high-voltage MOSFET family, so there is no imminent end-of-life or last-time-buy pressure. ## Package and thermal handling — the Full Pack advantage The TO-220 Full Pack (PG-TO220-FP) is the fully isolated variant of the standard TO-220. The metal tab is encapsulated, so no mounting insulator or thermal pad is needed between the device and the heatsink — a BOM simplification for high-voltage offline supplies where creepage and clearance are tight. Plan the heatsink accordingly.","metaTitle":"Infineon IPA95R750P7XKSA1 N-Channel MOSFET, 950 V, 750 mOhm","metaDescription":"Infineon IPA95R750P7XKSA1 CoolMOS P7 N-channel MOSFET: 950 V Vdss, 750 mOhm Rds(on) at 4.5 A, 23 nC gate charge. TO-220 Full Pack. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 220µA","Base Product Number":"IPA95R750","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"750mOhm @ 4.5A, 10V","Power Dissipation (Max)":"28W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"950 V","Input Capacitance (Ciss) (Max) @ Vds":"712 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7019985ef381d752f8fa55bb2a20a52e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Vgs threshold for IPA95R750P7XKSA1?","answer":"The maximum gate threshold voltage is 3.5 V at a drain current of 220 µA. The recommended drive voltage for achieving the rated on-resistance is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA95R750P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA95R750P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}