{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA90R800C3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA90R800C3","canonicalUrl":"https://icboms.com/infineon/IPA90R800C3","factsUrl":"https://icboms.com/api/mcp/products/IPA90R800C3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series, IPA90R800C3, N-Channel MOSFET, 900 V Vdss, 6.9 A continuous drain, 800 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55°C to 150°C junction.","salesMarkdown":"## 900 V CoolMOS — high-voltage switching for auxiliary and PFC stages The 42 nC typical gate charge at 10 V and 1100 pF input capacitance at 100 V drain bias give a moderate switching speed suited for hard-switched topologies like flyback auxiliary supplies, two-switch forward converters, and power-factor correction stages where the 900 V margin buys headroom over 600 V or 650 V alternatives. At reduced gate voltage the on-resistance climbs — the Vgs(th) max of 3.5 V at 460 µA means the device is fully enhanced by 10 V, but logic-level drive at 5 V will roughly double Rds(on) compared to the 10 V figure. For designs running from a 12 V or 15 V auxiliary rail the 10 V drive is straightforward; if the gate driver rail is lower, budget for higher conduction loss or select a part with lower threshold. The 33 W power dissipation ceiling at case temperature sets the thermal limit — with the TO-220 Full Pack's junction-to-case thermal path, a heatsink is required for any continuous load above a few watts. ## Temperature range and package — where this part goes The TO-220 Full Pack (PG-TO220 Full Pack) is a through-hole package with the backside tab fully encapsulated, so no mica washer or sil-pad is needed for isolation; the mounting screw directly clamps the package to the heatsink. This simplifies assembly and reduces BOM count, though the thermal resistance is slightly higher than a standard TO-220 with an external insulator. For ongoing designs this means no supply discontinuity risk from obsolescence. If a second-source or pin-compatible alternative is needed, the CoolMOS family includes other 900 V devices in the same TO-220 Full Pack footprint — parametric differences in Rds(on) and current rating should be verified against the design's thermal and efficiency targets.","metaTitle":"Infineon IPA90R800C3 CoolMOS N-Channel MOSFET, 900 V, 6.9 A","metaDescription":"Infineon IPA90R800C3 CoolMOS N-channel MOSFET, 900 V Vdss, 6.9 A continuous drain, 800 mOhm Rds(on) at 10 V. TO-220 Full Pack, -55°C to 150°C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 460µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"800mOhm @ 4.1A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"PG-TO220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"42 nC @ 10 V","Drain to Source Voltage (Vdss)":"900 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Current - Continuous Drain (Id) @ 25°C":"6.9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4a563d5727f73b2cfa644891daafb59b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPA90R800C3?","answer":"The maximum Rds(on) is 800 mOhm at 4.1 A drain current with 10 V gate-to-source voltage."},{"question":"What is the maximum drain current for IPA90R800C3?","answer":"The continuous drain current is rated at 6.9 A at 25°C case temperature."},{"question":"Can IPA90R800C3 replace IPA90R800C2?","answer":"The IPA90R800C2 is an earlier CoolMOS generation with the same 900 V / 800 mOhm rating and TO-220 Full Pack package. The C3 variant uses the latest CoolMOS technology with improved switching performance and lower gate charge — it is a drop-in replacement for the C2 in most designs, but verify the gate drive and switching losses against the original application note."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA90R800C3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA90R800C3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}