{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA80R650CEXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA80R650CEXKSA2","canonicalUrl":"https://icboms.com/infineon/IPA80R650CEXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPA80R650CEXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPA80R650CEXKSA2, N-Channel MOSFET, 800 V Vdss, 8 A Id, 650 mOhm Rds(on) at 10 V, 45 nC Qg, -40°C to 150°C Tj, TO-220-3 Full Pack, Through Hole, Tube.","salesMarkdown":"## 800 V CoolMOS in a fully isolated TO-220 The TO-220 Full Pack package (TO-220-3F) is fully moulded with the backside tab isolated from the drain, so you can bolt it directly to a heatsink without a silicone pad or mica washer. That saves assembly time and improves thermal contact — useful if you are swapping parts in the field or building a prototype on a perfboard. ## Gate charge and switching speed — what 45 nC buys you Total gate charge is 45 nC at 10 V gate drive. For a hard-switched converter at 70 kHz, the gate driver needs to source and sink about 3.15 mA average — well within a standard totem-pole driver like the IR2110 or a bootstrap driver. The 1100 pF input capacitance at 100 V drain bias means the Miller plateau is manageable; the part does not need a super-low-impedance driver to stay efficient. If you are pushing toward 150 kHz or higher, the 45 nC Qg starts to eat into the efficiency budget — the switching losses scale with frequency. For a 100 W flyback running at 65 kHz, this part is right at home. For a 300 W LLC converter at 200 kHz, you would want a CoolMOS with lower gate charge, like the IPx60Rxxx series. ## Thermal budget — 33 W in a TO-220FP Maximum power dissipation is 33 W at the case temperature. The TO-220 Full Pack has a higher junction-to-case thermal resistance than a standard TO-220 because the plastic moulding adds a thermal barrier — expect RthJC around 3.8 °C/W typical. With a 150°C maximum junction temperature and 85°C ambient in a sealed enclosure, you have about 17 W of usable dissipation before you hit the limit. That matches the conduction plus switching losses of an 8 A, 800 V part in a typical 150–200 W PFC stage.","metaTitle":"Infineon IPA80R650CEXKSA2 CoolMOS N-Ch MOSFET","metaDescription":"Infineon IPA80R650CEXKSA2 CoolMOS CE N-channel MOSFET: 800 V Vdss, 8 A Id, 650 mOhm Rds(on), TO-220-3 Full Pack. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 470µA","Base Product Number":"IPA80R650","Operating Temperature":"-40°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"650mOhm @ 5.1A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"TO-220-3F","Gate Charge (Qg) (Max) @ Vgs":"45 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.2000","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.20000","currency":"USD"},{"qty":10,"price":"$1.82800","currency":"USD"},{"qty":100,"price":"$1.45490","currency":"USD"},{"qty":500,"price":"$1.23104","currency":"USD"},{"qty":1000,"price":"$1.04452","currency":"USD"},{"qty":2000,"price":"$0.99230","currency":"USD"},{"qty":5000,"price":"$0.95499","currency":"USD"},{"qty":10000,"price":"$0.92338","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/bc4f8092ecb3d8ad3614e5ea54ffff38.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPA80R650CEXKSA2 RoHS compliant?","answer":"Yes, the IPA80R650CEXKSA2 is ROHS3 compliant."},{"question":"What is the typical Rds(on) for IPA80R650CEXKSA2?","answer":"The maximum Rds(on) is specified as 650 mOhm at 5.1 A drain current and 10 V gate drive. Typical on-resistance at 25°C is lower — expect around 550 mOhm — but the datasheet only guarantees the maximum value for design margin."},{"question":"Can IPA80R650CEXKSA2 be used for high-frequency switching?","answer":"The 45 nC gate charge and 1100 pF input capacitance make it suitable for hard-switched topologies up to about 100 kHz. Above that, switching losses rise and a lower-Qg CoolMOS (e.g., the CoolMOS C7 or P7 series) would be a better choice."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA80R650CEXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA80R650CEXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}