{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA80R460CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA80R460CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA80R460CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA80R460CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, N-Channel MOSFET, 800 V Drain-Source Voltage, 5 A Continuous Drain Current at 25°C, 460 mOhm Rds(on) at 7.1 A, 10 V, TO-220-3 Full Pack Through Hole, -40°C to 150°C Junction Temperature.","salesMarkdown":"The IPA80R460CEXKSA1 is an 800 V, 5 A N-Channel MOSFET in the CoolMOS CE series. ## Package and mounting — the full-pack advantage The TO-220 Full Pack (PG-TO220-FP) is a fully isolated through-hole package. The mounting hole pattern matches standard TO-220 hardware. For the rework bench, the full-pack body runs hotter than a standard TO-220 for the same die — the 34 W dissipation limit reflects the higher thermal resistance of the plastic-isolated package. Plan the heatsink accordingly. Gate threshold voltage is 3.9 V max at 680 µA. Recommended drive voltage is 10 V. Gate charge is 64 nC at 10 V. Input capacitance is 1600 pF at 100 V. The 150°C maximum junction is typical for CoolMOS devices and allows operation in high-ambient enclosures as long as the heatsink keeps the junction below that limit. The 5 A continuous drain current is specified at 25°C case temperature; derate linearly above that — at 100°C case the current capability drops roughly to 3.5 A, so check the thermal derating curve in the datasheet. For BOM planning, the active status removes the urgency of a last-time-buy, but as with any CoolMOS CE part, keep an eye on Infineon's PCN notices for die shrinks or package changes that could affect thermal performance.","metaTitle":"Infineon IPA80R460CEXKSA1 CoolMOS CE N-Channel MOSFET, 800 V","metaDescription":"Infineon IPA80R460CEXKSA1 CoolMOS™ CE N-channel MOSFET, 800 Vdss, 5 A continuous, 460 mOhm Rds(on) at 10 V. TO-220 Full Pack, active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 680µA","Base Product Number":"IPA80R","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"460mOhm @ 7.1A, 10V","Power Dissipation (Max)":"34W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"64 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1600 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/c15b8994aeba10a4ae84c9699d7690be.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA80R460CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA80R460CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}