{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA80R310CE","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA80R310CE","canonicalUrl":"https://icboms.com/infineon/IPA80R310CE","factsUrl":"https://icboms.com/api/mcp/products/IPA80R310CE","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA80R310CE, N-Channel MOSFET, 800 V Vdss, 310 mOhm Rds(on) max @ 11 A, 10 V gate, 16.7 A continuous drain, TO-220 Full Pack through-hole, -40 to 150 °C junction.","salesMarkdown":"The IPA80R310CE: That 800 V Vdss puts it squarely in the 400 V bus / PFC / flyback converter class — you get roughly 2× derating margin off a 400 V rail, which is the standard practice for offline SMPS designs. The 310 mOhm Rds(on) is the figure that drives conduction loss at the 16.7 A continuous drain rating (Tc): at 11 A the dissipation in the channel alone is about 37.5 W, which the 35 W package limit (Tc) keeps in check only with a good heatsink on the Full Pack tab. ## Gate drive and switching — what the numbers tell you The gate threshold voltage maxes at 3.9 V at 1 mA drain current, so a standard 10 V gate drive (the recommended drive voltage for minimum Rds(on)) is well above the threshold — no logic-level gate drive required, but it also won't fully enhance at 5 V. Gate charge is 91 nC at 10 V, which is moderate for an 800 V device; expect a gate driver capable of sourcing at least 1 A peak to keep switching transitions crisp and avoid miller plateau dwell. Input capacitance is 2320 pF at 100 V Vds — that number feeds the driver's turn-on energy and the switching loss calculation at frequency. ## Package and mounting — TO-220 Full Pack specifics The TO-220 Full Pack (PG-TO220 Full Pack) is a fully isolated through-hole package — the metal tab is not electrically connected to the drain, which simplifies heatsinking because you don't need an insulating pad. The through-hole leads suit point-to-point wiring or PCB mounting with a 0.1-inch pitch footprint. The 150 °C TJ max is typical for CoolMOS parts and allows some headroom in a 85 °C ambient with proper heatsinking.","metaTitle":"Infineon IPA80R310CE CoolMOS N-Channel MOSFET, 800 V","metaDescription":"Infineon IPA80R310CE CoolMOS N-channel MOSFET: 800 V Vdss, 310 mOhm Rds(on) max at 11 A, 10 V gate. Active lifecycle, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 1mA","Operating Temperature":"-40°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"310mOhm @ 11A, 10V","Power Dissipation (Max)":"35W (Tc)","Supplier Device Package":"PG-TO220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"91 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"2320 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA80R310CE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA80R310CE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}