{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA80R1K2P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA80R1K2P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA80R1K2P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA80R1K2P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPA80R1K2P7XKSA1, N-Channel MOSFET, 800 V Vds, 1.2 Ω Rds(on) at 10 V, 4.5 A continuous drain, TO-220-3 Full Pack (PG-TO220-3-FP), through-hole mount.","salesMarkdown":"The Infineon IPA80R1K2P7XKSA1 is an 800 V N-channel power MOSFET from the CoolMOS™ P7 series, built on a charge-compensation superjunction technology that cuts the Rds(on) × Qg figure of merit versus older planar devices. At 4.5 A continuous drain the I²R loss reaches about 24 W — right at the package's 25 W dissipation limit, so the heatsink design needs to keep the junction below 150 °C. The gate charge of 11 nC at 10 V is low enough that a standard PWM controller's gate-drive output can switch it at frequencies up to 100 kHz without excessive drive loss; in a 65–100 kHz PFC stage the switching loss from Qg is manageable. The input capacitance of 300 pF at 500 V drain-source means the Miller plateau is narrow, which helps reduce cross-conduction in hard-switched topologies. Infineon has placed the IPA80R1K2P7XKSA1 into Last Buy status. That means the final production window is open now, and once inventory clears through authorised and independent channels, this order code will not be manufactured again. For a BOM that currently specifies this MOSFET, the immediate action is to secure enough quantity for the remaining production run or to begin qualifying a pin-compatible replacement. ## Package and mounting — the full-pack advantage The PG-TO220-3-FP is a fully isolated full-pack variant of the standard TO-220. The plastic encapsulation extends over the back of the tab, so the mounting hole and the entire exposed surface are electrically isolated from the drain. The three through-hole leads fit a 2.54 mm pitch footprint, common on PFC and flyback PCB layouts.","metaTitle":"Infineon IPA80R1K2P7XKSA1 CoolMOS™ P7 N-Ch MOSFET, 800V","metaDescription":"Infineon IPA80R1K2P7XKSA1 CoolMOS™ P7 N-channel MOSFET, 800 V drain-source, 1.2 Ω Rds(on), 4.5 A continuous drain, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Last Buy","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 80µA","Base Product Number":"IPA80R1","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1.2Ohm @ 1.7A, 10V","Power Dissipation (Max)":"25W (Tc)","Supplier Device Package":"PG-TO220-3-FP","Gate Charge (Qg) (Max) @ Vgs":"11 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"300 pF @ 500 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.4400","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"Is IPA80R1K2P7XKSA1 obsolete or still available?","answer":"Infineon has marked the IPA80R1K2P7XKSA1 as Last Buy. It is not yet obsolete — the final production run is in process — but once existing inventory is exhausted through both authorised and independent channels, no new units will be manufactured. If you need this exact order code, the time to secure stock is now, through an RFQ to a distributor that can source from the remaining supply."},{"question":"What is the exact Rds(on) and Vds rating of IPA80R1K2P7XKSA1?","answer":"The drain-to-source voltage rating is 800 V. The on-resistance is 1.2 Ω maximum at a gate drive of 10 V and a drain current of 1.7 A."},{"question":"What is a drop-in replacement for IPA80R1K2P7XKSA1?","answer":"The evidence does not list an official Infineon successor or cross-reference for this order code. A drop-in replacement would need to match the 800 V Vds, 1.2 Ω Rds(on), and the TO-220 Full Pack (PG-TO220-3-FP) footprint. Without a documented alternate, the safest path is to qualify a candidate from the same CoolMOS™ P7 family that shares the package and voltage class, or to work with a distributor who can cross-reference from their inventory."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA80R1K2P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA80R1K2P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}