{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R650CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R650CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA65R650CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA65R650CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPA65R650CEXKSA1, N-Channel MOSFET, 650 V Vdss, 7 A Id, 650 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, Through Hole, -40°C to 150°C.","salesMarkdown":"## 650 V, 7 A CoolMOS™ CE — what this N-channel MOSFET brings to the switching supply The TO-220 Full Pack package provides full isolation from the heatsink — no insulating pad needed, which simplifies assembly and improves thermal transfer to the mounting surface. That low gate charge keeps switching losses in check at moderate frequencies — expect clean transitions in the 50–150 kHz range without oversized gate drivers. The input capacitance of 440 pF at 100 V Vds confirms the part is optimised for hard-switching topologies, not resonant or soft-switching designs where higher Ciss can be tolerated. No need to stockpile or search for a drop-in replacement yet — the CoolMOS™ CE family remains a supported portfolio. ## Package and thermal handling — the Full Pack advantage The TO-220 Full Pack (PG-TO220-3-FP) isolates the backside tab electrically, so the heatsink can be chassis-grounded without a mica washer or silicone pad. Maximum power dissipation is 28 W at case temperature — enough for a 15–25 W flyback converter when the junction is kept below 150°C.","metaTitle":"Infineon IPA65R650CEXKSA1 CoolMOS™ CE N-Channel MOSFET","metaDescription":"Infineon IPA65R650CEXKSA1 CoolMOS™ CE N-Channel MOSFET: 650 V Vdss, 7 A Id, 650 mOhm Rds(on), TO-220 Full Pack, active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 210µA","Base Product Number":"IPA65R650","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"650mOhm @ 2.1A, 10V","Power Dissipation (Max)":"28W (Tc)","Supplier Device Package":"PG-TO220-3-FP","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"440 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2300","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/29a17061cd3650beb86fa1a3382aa009.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPA65R650CEXKSA1?","answer":"The maximum on-resistance is 650 mOhm at a gate-source voltage of 10 V and a drain current of 2.1 A. This is the figure to use for worst-case conduction loss calculations in a switching converter."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R650CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R650CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}