{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R420CFDXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R420CFDXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA65R420CFDXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA65R420CFDXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA65R420CFDXKSA1, N-Channel MOSFET (Metal Oxide), 650 V drain-to-source voltage, 8.7 A continuous drain current at 25°C, 420 mOhm Rds(on) at 10 V, 32 nC gate charge, PG-TO220-3-111 Full Pack, -55°C to 150°C junction temperature.","salesMarkdown":"## 650 V CoolMOS — the isolated-package workhorse for offline power This part belongs to Infineon's CoolMOS family, a mature high-voltage MOSFET platform optimised for hard-switching topologies like PFC boost stages, flyback converters, and LLC half-bridges in AC-DC power supplies rated up to several hundred watts. ## NRND — plan the last-time-buy or evaluate a drop-in For a BOM line already qualified, that means the window for last-time-buy orders is open but finite — Infineon will eventually issue an EOL notice with a final order date. New designs should target a currently-active CoolMOS sibling in the same voltage and package class. Sourcing through independent distribution remains viable for production support and bridge quantities, but the NRND flag should trigger a qualification plan for an alternative if volume production extends beyond the next 12–18 months. The 650 V Vdss gives 15–20% margin on a 400 V DC bus (typical PFC output), which is comfortable for universal-input offline supplies. Gate charge of 32 nC at 10 V is moderate — a standard gate driver IC can switch it at 65–100 kHz without excessive driver dissipation. Input capacitance of 870 pF at 100 V Vds is low enough that the Miller plateau does not dominate the switching transition, but you still want a gate-drive resistor in the 10–22 Ω range to control dv/dt. ## Package note: TO-220 Full Pack rework and mounting The PG-TO220-3-111 Full Pack is a through-hole package with the mounting hole in the tab. That saves a BOM line and a manual assembly step. For rework, the plastic body is thicker than a standard TO-220, so it takes a bit longer to heat-soak the tab when desoldering; a 400°C iron with a wide tip works. The package is MSL 1, no bake required before reflow if the bag seal is intact.","metaTitle":"Infineon IPA65R420CFDXKSA1 CoolMOS N-Ch MOSFET, 650V, 8.7A","metaDescription":"Infineon IPA65R420CFDXKSA1 CoolMOS N-channel MOSFET, 650V Vdss, 8.7A Id, 420mOhm Rds(on), TO-220-3 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 340µA","Base Product Number":"IPA65R420","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"420mOhm @ 3.4A, 10V","Power Dissipation (Max)":"31.2W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"870 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6693","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9881420d746240e6f5d52e1372fa9550.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement for IPA65R420CFDXKSA1?","answer":"The evidence does not list an official Infineon successor order code. For a pin-compatible drop-in, look at the current CoolMOS C7 or P7 series parts in the same 650 V, TO-220 Full Pack, 400–500 mOhm range — for example, the IPx65R4xx family. Verify gate drive voltage and package variant against your layout before substituting."},{"question":"What is the difference between IPA65R420CFDXKSA1 and IPA65R380CFDXKSA1?","answer":"The primary difference is on-resistance: the IPA65R420CFDXKSA1 has a maximum Rds(on) of 420 mOhm, while the IPA65R380CFDXKSA1 is a lower-resistance variant at 380 mOhm. Both are 650 V CoolMOS N-channel devices in the same TO-220 Full Pack package. The 380 mOhm part will have slightly lower conduction loss at the same current, but the difference is small — about 10% — and may not justify a requalification unless the thermal budget is tight."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R420CFDXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R420CFDXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}