{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R310CFDXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R310CFDXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA65R310CFDXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA65R310CFDXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA65R310CFDXKSA1, N-Channel MOSFET, 650 V Vdss, 310 mOhm Rds(on) at 10 V, 11.4 A Id, TO-220-3 Full Pack, -55°C to 150°C junction.","salesMarkdown":"## 650 V CoolMOS in a full-pack TO-220 Total gate charge is 41 nC at 10 V, which sets the driver energy per switching cycle. At moderate frequencies (50–100 kHz) this keeps gate-drive losses manageable with standard MOSFET drivers. Input capacitance is 1100 pF at 100 V drain-source, giving a reasonable Miller plateau width for clean turn-on. The 4.5 V threshold at 440 µA means a 10 V drive is needed to reach the minimum Rds(on); logic-level drive at 5 V will not fully enhance the channel. For a production line already qualified, the NRND status does not trigger an immediate last-time-buy, but it does mean the supply window is finite. Buyers should evaluate a pin-compatible second source or a successor within the CoolMOS family for any new project. ## Thermal and mounting note Maximum power dissipation is 32 W at case temperature. The TO-220 Full Pack has a metal backplate electrically isolated from the die, so no insulating pad is required — the device can be bolted directly to a grounded heatsink. The supplier device package is PG-TO220-3-111. Through-hole mounting suits wave-solder assembly; the three leads are standard 0.8 mm pitch.","metaTitle":"Infineon IPA65R310CFDXKSA1 CoolMOS N-Ch MOSFET, 650V","metaDescription":"Infineon IPA65R310CFDXKSA1 CoolMOS N-channel MOSFET, 650V Vdss, 310mOhm Rds(on), 11.4A Id, TO-220 Full Pack. NRND.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 440µA","Base Product Number":"IPA65R310","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"310mOhm @ 4.4A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"41 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0500","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8c5227e87dd18cf88ec68b966ce2db29.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R310CFDXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R310CFDXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}