{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R225C7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R225C7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA65R225C7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA65R225C7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V drain-to-source voltage, 225 mOhm Rds(on) at 10 V gate drive, 7 A continuous drain current, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon IPA65R225C7XKSA1 is an N-channel enhancement-mode power MOSFET from the CoolMOS C7 series, built on a superjunction technology. Gate charge is 20 nC at 10 V. Input capacitance is 996 pF at 400 V drain-source. ## Temperature range and package considerations The TO-220 Full Pack isolates the backside tab electrically, so the device can be bolted directly to a metal enclosure or heatsink without an insulating washer. Maximum power dissipation is 29 W at case temperature, which sets the thermal budget for the design; a proper heatsink and thermal interface are required to stay within the junction limit at full load. The base product number is IPA65R225, and the suffix indicates the C7 generation and the TO-220 Full Pack package variant. RoHS compliance is standard for this series; the part is lead-free and suitable for EU RoHS-directed assemblies.","metaTitle":"Infineon IPA65R225C7XKSA1 CoolMOS C7 N-Ch MOSFET, 650V","metaDescription":"Infineon IPA65R225C7XKSA1 N-channel 650V MOSFET, 225mOhm Rds(on), 7A, TO-220 Full Pack. CoolMOS C7 series. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ C7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 240µA","Base Product Number":"IPA65R225","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"225mOhm @ 4.8A, 10V","Power Dissipation (Max)":"29W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"996 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.3100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bc6baa50887d383f87ee3e4ddde5d68c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does IPA65R225C7XKSA1 compare to IPA65R225C6?","answer":"Both are 650 V, 225 mOhm CoolMOS devices in the same TO-220 Full Pack. The C7 generation typically offers lower gate charge and improved switching performance over the C6 generation, making it better suited for higher-frequency designs. Pin-compatible for drop-in replacement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R225C7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R225C7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}