{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R190E6","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R190E6","canonicalUrl":"https://icboms.com/infineon/IPA65R190E6","factsUrl":"https://icboms.com/api/mcp/products/IPA65R190E6","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA65R190E6, N-Channel MOSFET, 650 V Vdss, 190 mOhm Rds(on) @ 10 V, 20.2 A Id, TO-220-3 Full Pack, -55°C to 150°C TJ.","salesMarkdown":"That 190 mOhm Rds(on) sets the conduction loss anchor for a PFC boost stage or flyback primary switch — at 7.3 A the dissipation sits at roughly 10 W, which the 34 W package limit can handle with a modest heatsink. In a real 85°C ambient with forced air, expect to derate to around 12–14 A continuous; the datasheet's safe operating area curve is the final arbiter for your switching frequency and duty cycle. ## Gate drive and switching — 73 nC total gate charge Total gate charge is 73 nC at 10 V Vgs, which is moderate for a 650 V, 190 mOhm device. A typical 1 A gate driver can charge the gate in about 73 ns, keeping switching losses manageable in a 100 kHz PFC. Input capacitance (Ciss) is 1620 pF at 100 V Vds — that's the load the gate driver sees during the Miller plateau. Pair it with a driver that can source and sink at least 1 A to avoid excessive turn-on/turn-off delay in hard-switched topologies. The wide TJ range also gives headroom for transient overloads in automotive auxiliary converters (though this part is not AEC-Q101 qualified per the listing).","metaTitle":"Infineon IPA65R190E6 CoolMOS N-Channel MOSFET, 650 V","metaDescription":"Infineon IPA65R190E6 CoolMOS N-channel MOSFET: 650 V Vdss, 190 mOhm Rds(on), 20.2 A Id, TO-220 Full Pack, -55°C to 150°C TJ. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 730µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 7.3A, 10V","Power Dissipation (Max)":"34W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"73 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1620 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/693b368e8779885267f5b3256923d2ed.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to IPA65R190E6?","answer":"Within the CoolMOS family, parts sharing the same TO-220 Full Pack footprint and similar 650 V rating include the IPA65R380E6 (380 mOhm, lower current) and IPA65R125E6 (125 mOhm, higher current). The 190 mOhm variant sits in the middle of the density options — choose the Rds(on) tier that matches your conduction loss budget."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R190E6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R190E6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}