{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R190C7","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R190C7","canonicalUrl":"https://icboms.com/infineon/IPA65R190C7","factsUrl":"https://icboms.com/api/mcp/products/IPA65R190C7","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CoolMOS™ series, N-Channel MOSFET, 650 V drain-source, 8 A continuous drain, 190 mOhm Rds(on), TO-220-3 Full Pack, Through Hole.","salesMarkdown":"## Gate charge and switching-loss budget The IPA65R190C7: The threshold voltage (Vgs(th)) max is 4 V at 290 µA drain current — this is the turn-on edge; a gate drive that pulls below 4 V risks the MOSFET operating in the linear region during switching, increasing dissipation. ## TO-220 Full Pack mounting and thermal budget Housed in a PG-TO220 Full Pack (TO-220-3) with through-hole mounting — the full-pack variant has a fully insulated backside, so no thermal pad or insulating washer is needed against the heatsink; the tab is electrically isolated, simplifying heatsink attachment and reducing system assembly cost. Maximum power dissipation is 30 W at case temperature (Tc), and the operating junction temperature range spans -55°C to 150°C — the 30 W ceiling assumes an ideal heatsink; real-world dissipation is derated by the thermal resistance of the interface and the ambient conditions.","metaTitle":"Infineon IPA65R190C7 CoolMOS N-Ch 650V 8A TO-220FP","metaDescription":"Infineon IPA65R190C7 CoolMOS N-channel MOSFET, 650V Vdss, 8A Id, 190mOhm Rds(on), TO-220 Full Pack. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 290µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 5.7A, 10V","Power Dissipation (Max)":"30W (Tc)","Supplier Device Package":"PG-TO220 Full Pack","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1150 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6700","priceTiers":[{"qty":180,"price":"$1.67000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/62490df7f9f13a59e5cb90725d33e681.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPA65R190C7/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) at the rated current and temperature?","answer":"The maximum Rds(on) is 190 mOhm at Id=5.7 A and Vgs=10 V. At the full 8 A continuous drain current and elevated junction temperature (e.g., 125°C), the on-resistance will be significantly higher — expect roughly 1.6× to 1.8× the 25°C value, so budget for 300–340 mOhm in a hot design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R190C7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R190C7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}