{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA65R150CFDXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA65R150CFDXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA65R150CFDXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA65R150CFDXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA65R150CFDXKSA1 N-Channel MOSFET, 650V Vdss, 150mOhm Rds(on) @ 9.3A, 22.4A Id, TO-220-3 Full Pack, -55°C to 150°C TJ.","salesMarkdown":"## 650 V CoolMOS — what this part was designed for It was designed for high-efficiency power conversion in switched-mode power supplies, power factor correction stages, and flyback converters where the full-pack isolation simplifies heatsinking by eliminating the need for an insulating pad. ## Key ratings that drive the design decision The 650 V drain-source breakdown voltage sets the bus voltage ceiling — this part fits 380 V DC-link PFC stages and universal-input flybacks with margin. Gate charge of 86 nC at 10 V gives a sense of the drive energy per switching cycle — relevant when sizing the gate driver and estimating switching losses at frequency. Input capacitance of 2340 pF at 100 V Vds influences the drive current requirement and turn-on delay. The 34.7 W power dissipation ceiling at the case defines the thermal budget; the full-pack package conducts heat through the back tab, so a greased interface to a heatsink is the typical mounting. This simplifies assembly and reduces thermal resistance in the mounting stack. The through-hole leads suit wave-solder or hand-solder rework.","metaTitle":"IPA65R150CFDXKSA1 CoolMOS N-Ch MOSFET, 650V 150mOhm","metaDescription":"Infineon IPA65R150CFDXKSA1 CoolMOS N-Channel MOSFET, 650V Vdss, 150mOhm Rds(on), 22.4A Id.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 1mA","Base Product Number":"IPA65R","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"150mOhm @ 9.3A, 10V","Power Dissipation (Max)":"34.7W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"86 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2340 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"22.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.2900","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2ee0c11d0b9ded4d46f6ddf68a26f289.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPA65R150CFDXKSA1 obsolete?","answer":"Yes, the lifecycle status is Obsolete. Infineon has discontinued production."},{"question":"What is the Rds(on) of IPA65R150CFDXKSA1?","answer":"The maximum on-resistance is 150 mOhm at a drain current of 9.3 A with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA65R150CFDXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA65R150CFDXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}