{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R600P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R600P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA60R600P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA60R600P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, N-Channel MOSFET, 600 V drain-source, 6 A continuous drain, 600 mΩ on-resistance at 10 V gate drive, 9 nC gate charge, PG-TO220-FP full-pack through-hole package, -55 to 150 °C junction temperature.","salesMarkdown":"The IPA60R600P7XKSA1: With a 600 V drain-source rating and 6 A continuous drain current, it targets the low-to-medium power end of PFC stages, flyback converters, and LLC resonant half-bridges in AC-DC supplies up to about 150 W. The PG-TO220-FP full-pack package isolates the backside tab electrically, so no mica washer or thermal pad is needed when bolting it to a heatsink — a time-saver on the assembly line and a reliability win in vibration-prone environments. ## On-resistance and gate charge — sizing the conduction and switching loss budget At 6 A continuous drain, expect roughly 21.6 W of conduction loss at max Rds(on) — the 21 W package dissipation limit means the designer must derate the current or improve heatsinking in continuous operation. The 9 nC typical gate charge at 10 V is low enough that a standard 12 V gate-drive IC can switch it cleanly at 100 kHz without excessive driver dissipation; the 363 pF input capacitance at 400 V confirms fast voltage slew rates are achievable. ## Temperature range and junction limits Rated for a junction temperature span of -55 to 150 °C, the IPA60R600P7XKSA1 can handle the thermal cycling seen in outdoor telecom rectifiers, industrial power supplies, and automotive on-board chargers. The CoolMOS P7 series is Infineon's mainstream high-voltage MOSFET platform, so second-source equivalents from other manufacturers are not officially cross-referenced — but the part is widely available through Infineon's distribution network and the independent channel.","metaTitle":"Infineon IPA60R600P7XKSA1 CoolMOS P7 N-Ch MOSFET, 600V, 6A","metaDescription":"Infineon IPA60R600P7XKSA1 CoolMOS P7 N-channel MOSFET: 600V Vdss, 6A Id, 600mΩ Rds(on), 9nC Qg, PG-TO220-FP. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 80µA","Base Product Number":"IPA60R600","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 1.7A, 10V","Power Dissipation (Max)":"21W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"9 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"363 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0100","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4ef9735ae296b21467f00fe093e402e7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IPA60R600P7XKSA1 be used in high-voltage PFC circuits?","answer":"Yes. The 600 V drain-source rating, 6 A continuous drain current, 600 mΩ Rds(on), and 9 nC gate charge make it well suited for the boost stage of power-factor-correction circuits in AC-DC supplies up to about 150 W. The low gate charge supports switching frequencies typical of PFC controllers (65–100 kHz)."},{"question":"What is the difference between IPA60R600P7XKSA1 and IPA60R600P6?","answer":"The IPA60R600P7XKSA1 belongs to the CoolMOS P7 series, while IPA60R600P6 is from the earlier CoolMOS P6 generation. The P7 series typically offers lower gate charge and improved switching performance at similar on-resistance levels, but exact parametric differences should be verified against the respective datasheets. Both parts share the same 600 V / 6 A / 600 mΩ headline ratings and PG-TO220-FP package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R600P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R600P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}