{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R600P6XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R600P6XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA60R600P6XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA60R600P6XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P6 N-Channel MOSFET, IPA60R600P6XKSA1, 600V Vdss, 4.9A Id, 600mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.","salesMarkdown":"## 600V N-channel in a full-pack TO-220 The IPA60R600P6XKSA1: The TO-220 Full Pack (PG-TO220-FP) isolates the backside tab electrically — no insulating pad or washer is needed between the device and the heatsink, which simplifies assembly and reduces thermal interface resistance in a grounded-heatsink design. ## Gate charge and switching speed Total gate charge is 12 nC at 10V gate drive. For a 100 kHz hard-switched converter, the average gate-drive current is 1.2 mA — a small-signal driver handles it without thermal stress. The 557 pF input capacitance at 100V drain bias means the driver sees a moderate capacitive load; rise and fall times are dominated by the driver's source/sink capability, not the device's own Ciss. The 4.5V maximum gate threshold at 200µA drain current means a 10V gate drive fully enhances the channel and achieves the rated Rds(on). A 5V logic-level gate signal is marginal — the device may not fully turn on, leaving the channel in the linear region and raising dissipation.","metaTitle":"Infineon IPA60R600P6XKSA1 CoolMOS P6 N-Ch MOSFET, 600V, 4.9A","metaDescription":"Infineon IPA60R600P6XKSA1 CoolMOS P6 N-channel MOSFET, 600V Vdss, 4.9A Id, 600mOhm Rds(on), TO-220 Full Pack. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P6","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 200µA","Base Product Number":"IPA60R600","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 2.4A, 10V","Power Dissipation (Max)":"28W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"557 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4.9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/685b1d0a7cae621d39a36bf83b79e170.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPA60R600P6XKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to IPA60R600P6XKSA1?","answer":"The CoolMOS P6 family shares the same TO-220 Full Pack footprint across similar voltage/current grades — parametric substitutes exist within the series, but each must be verified for Rds(on) and gate charge against the BOM position."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R600P6XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R600P6XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}