{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R299CPXK","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R299CPXK","canonicalUrl":"https://icboms.com/infineon/IPA60R299CPXK","factsUrl":"https://icboms.com/api/mcp/products/IPA60R299CPXK","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA60R299CPXK, N-channel MOSFET, 600 V drain-source, 11 A continuous drain, 299 mΩ on-resistance at 10 V gate drive, 29 nC gate charge, TO-220-3 Full Pack package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V CoolMOS — the isolated-package workhorse for offline power That translates to about 13 W conduction loss at the rated 11 A continuous current — the 33 W package dissipation limit leaves headroom for switching losses, but not a lot. ## Full Pack package — no insulator needed The TO-220 Full Pack (PG-TO220-3-31) is a through-hole, fully isolated package. The metal mounting tab is completely encased in epoxy, so there is no electrical connection to the drain — you can screw it to a grounded chassis or heatsink without an insulating washer. That simplifies assembly and improves thermal transfer compared to a standard TO-220 with a mica pad. The trade-off is higher thermal resistance versus a non-isolated TO-220, so the 33 W dissipation rating is the practical ceiling; plan the heatsink accordingly. Input capacitance is 1100 pF typical at 100 V drain-source — moderate for a 600 V device, which helps with gate-drive power. The 600 V rating gives ample margin for universal-input offline converters (up to 400 V DC bus) and 3-phase rectified supplies.","metaTitle":"Infineon IPA60R299CPXK CoolMOS N-Ch 600V 11A MOSFET","metaDescription":"Infineon IPA60R299CPXK CoolMOS N-channel 600V 11A MOSFET in TO-220 Full Pack. 299mΩ Rds(on), 29nC gate charge.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 440µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"299mOhm @ 6.6A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"PG-TO220-3-31","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/cee5ed6073fb770d3603501fcd3c01d6.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between IPA60R299CPXK and IPA60R299CP?","answer":"The suffix 'XK' typically denotes a specific packaging or reel configuration variant from Infineon. The die and electrical ratings (600 V, 11 A, 299 mΩ, 29 nC Qg) are shared across the base part number. The difference is in the shipping medium or packing code, not the silicon performance — verify the exact package code (PG-TO220-3-31) and reel quantity for your BOM line."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R299CPXK","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R299CPXK when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}