{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R280E6XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R280E6XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA60R280E6XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA60R280E6XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA60R280E6XKSA1, N-Channel MOSFET, 600 V Vdss, 280 mOhm Rds(on) at 10 V, 13.8 A Id, TO-220-3 Full Pack, -55°C to 150°C Tj.","salesMarkdown":"## 600 V CoolMOS with a 280 mOhm Rds(on) — the conduction-loss trade-off The full-pack (isolated) TO-220 variant eliminates the need for an insulating pad against the heatsink, saving assembly time and improving thermal coupling to the mounting surface. ## NRND — plan the last-time buy or cross to a current CoolMOS Buyers supporting a live BOM should confirm last-time-buy dates with Infineon or secure bridge inventory through independent distribution. ## Gate charge and input capacitance — switching speed budget With a typical gate charge of 43 nC at 10 V and an input capacitance of 950 pF at 100 V Vds, the IPA60R280E6XKSA1 is suited for hard-switched topologies operating up to the low 100 kHz range.","metaTitle":"Infineon IPA60R280E6XKSA1 CoolMOS N-Ch MOSFET, 600V, 280mOhm","metaDescription":"Infineon IPA60R280E6XKSA1 CoolMOS N-channel MOSFET, 600V Vdss, 280mOhm Rds(on), 13.8A Id. RFQ for current availability.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 430µA","Base Product Number":"IPA60R280","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 6.5A, 10V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"43 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"950 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"13.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5567","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPA60R280E6XKSA1/alternatives.json"},"ai":{"faq":[{"question":"Is IPA60R280E6XKSA1 obsolete?","answer":"It is not fully discontinued, but Infineon no longer recommends it for new projects. Existing production lines can still source it through distribution or surplus channels while inventory lasts."},{"question":"What is the replacement for IPA60R280E6XKSA1?","answer":"A functionally equivalent replacement would be a 600 V, N-channel CoolMOS in a TO-220 Full Pack package with a similar Rds(on) — for example, a current-generation CoolMOS C7 or P7 series part with comparable ratings. Verify pin compatibility and thermal performance before substituting."},{"question":"What is the Rds(on) of IPA60R280E6XKSA1?","answer":"The maximum Rds(on) is 280 mOhm at a drain current of 6.5 A and a gate-source voltage of 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R280E6XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R280E6XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}