{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R1K0CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R1K0CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA60R1K0CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA60R1K0CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA60R1K0CEXKSA1, N-Channel Super Junction MOSFET, 600 V Vdss, 6.8 A Id, 1 Ohm Rds(on) at 10 V, 13 nC Qg, TO-220 Full Pack, -40°C to 150°C.","salesMarkdown":"The Infineon IPA60R1K0CEXKSA1 is an N-channel super-junction MOSFET from the CoolMOS™ series, built for high-voltage power switching applications. The device uses Infineon's super-junction technology to achieve a low gate charge of 13 nC at 10 V, which reduces switching losses in hard-switched topologies. ## 1 Ohm Rds(on) — what it means for conduction loss At 1.5 A, the I²R loss is about 2.25 W, which the 26 W power dissipation rating (at case temperature) can handle with adequate heatsinking. If your gate-drive supply is limited to 5 V, this part is not the right fit — look for a logic-level MOSFET instead. ## 13 nC gate charge — switching speed and driver sizing In a 100 kHz hard-switched converter, the gate-drive power loss is roughly Qg × Vgs × fsw = 13 nC × 10 V × 100 kHz = 13 mW, which is negligible. The low input capacitance of 280 pF at 100 V Vds further reduces the drive burden. This combination of low Qg and low Ciss makes the IPA60R1K0CEXKSA1 well suited for medium-frequency flyback and PFC stages where switching losses dominate. ## TO-220 Full Pack — mounting and thermal interface The PG-TO220-FP (Full Pack) package has a fully isolated plastic body, so the mounting tab is electrically isolated from the drain. The through-hole mounting suits point-of-load and board-level power stages where wave soldering or manual insertion is the norm.","metaTitle":"Infineon IPA60R1K0CEXKSA1 CoolMOS™ N-Channel MOSFET, 600 V","metaDescription":"Infineon IPA60R1K0CEXKSA1 CoolMOS™ N-channel super-junction MOSFET. 600 V Vdss, 6.8 A Id, 1 Ohm Rds(on) at 10 V. TO-220 Full Pack. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Super Junction","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 130µA","Base Product Number":"IPA60R1","Operating Temperature":"-40°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"1Ohm @ 1.5A, 10V","Power Dissipation (Max)":"26W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"13 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"280 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6968","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7d85aef96763433851005b81f54e0a9c.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R1K0CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R1K0CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}