{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R125P6","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R125P6","canonicalUrl":"https://icboms.com/infineon/IPA60R125P6","factsUrl":"https://icboms.com/api/mcp/products/IPA60R125P6","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA60R125P6, N-Channel MOSFET, 600 V Vdss, 30 A Id, 125 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.","salesMarkdown":"## Gate charge and switching — 56 nC at 10 V Gate charge of 56 nC at 10 V is moderate for a 600 V, 30 A device. It tells the designer what the gate driver must deliver to switch the MOSFET at the target frequency. For a 100 kHz hard-switched PFC, the average gate-drive power is about 56 nC × 10 V × 100 kHz = 56 mW — well within a standard driver's capability. ## Package advantage — TO-220 Full Pack The TO-220 Full Pack (PG-TO220-3-111) is a through-hole package with a fully isolated backside tab. This saves a BOM line and a manual assembly step. For dissipation above that, a standard TO-220 with an insulator or a surface-mount D²PAK would be the alternative. The wide temperature range covers motor-drive cabinets, outdoor telecom rectifiers, and under-hood auxiliary power converters. The 4.5 V maximum gate threshold at 960 µA drain current means the device is fully enhanced with a standard 10 V gate drive, but the threshold is high enough to stay off with a 0 V gate signal even at elevated temperature.","metaTitle":"Infineon IPA60R125P6 CoolMOS N-Ch MOSFET","metaDescription":"Infineon IPA60R125P6 CoolMOS N-channel MOSFET, 600V Vdss, 30A Id, 125mOhm Rds(on) at 10V. TO-220 Full Pack. Active product.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 960µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 11.6A, 10V","Power Dissipation (Max)":"34W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"56 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2660 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":null,"stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/21887673af4c136e9275cb0dae24efae.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does IPA60R125P6 compare to IPA60R180P6?","answer":"The IPA60R180P6 is a lower-current variant in the same 600 V CoolMOS family, with a higher on-resistance of 180 mOhm. The IPA60R125P6 offers lower conduction loss for the same voltage rating, making it the better choice when the load current exceeds about 8 A RMS. Both share the same TO-220 Full Pack footprint and gate-drive voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R125P6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R125P6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}