{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA60R060P7XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA60R060P7XKSA1","canonicalUrl":"https://icboms.com/infineon/IPA60R060P7XKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA60R060P7XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPA60R060P7XKSA1, N-Channel MOSFET, 600 V Vdss, 60 mOhm Rds(on) @ 15.9 A, 10 V, 48 A continuous drain, 67 nC gate charge, PG-TO220-FP, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V, 60 mΩ — the conduction-loss anchor for a high-voltage rail The IPA60R060P7XKSA1: That 60 mΩ figure is the number a power-stage designer reaches for first: it sets the conduction loss at a given load current, and at 48 A continuous drain current (rated at a 25°C case temperature) this part can handle the primary-side switch in a several-hundred-watt offline supply or a high-voltage DC-DC converter. ## Gate charge and switching — sizing the driver and estimating losses Input capacitance is 2895 pF at 400 V drain-source. The maximum power dissipation of 29 W at the case temperature is a package-limited figure; the TO-220 Full Pack's thermal resistance is higher than a standard TO-220 because the plastic encapsulates the back of the die, but the trade-off is the electrically isolated tab. A designer should derate the continuous current from the 48 A at 25°C case temperature down to roughly 30 A at 100°C case temperature, following the typical derating curve for this package class. For a production BOM that needs this 600 V, 60 mΩ CoolMOS P7 device, the supply outlook is stable through standard distribution.","metaTitle":"Infineon IPA60R060P7XKSA1 CoolMOS P7 N-Channel MOSFET, 600V","metaDescription":"Infineon IPA60R060P7XKSA1 CoolMOS™ P7 N-channel MOSFET, 600 V Vdss, 60 mΩ Rds(on) at 10 V, 48 A continuous drain, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ P7","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 800µA","Base Product Number":"IPA60R060","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"60mOhm @ 15.9A, 10V","Power Dissipation (Max)":"29W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"67 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"2895 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"48A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.5600","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[{"question":"What are the specifications of IPA60R060P7XKSA1?","answer":"It comes in a PG-TO220-FP full-pack through-hole package."},{"question":"What is the Rds(on) of IPA60R060P7XKSA1?","answer":"The maximum Rds(on) is 60 mΩ at a 10 V gate drive with 15.9 A of drain current. This is the headline on-resistance spec for conduction loss calculations in a switching power supply."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA60R060P7XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA60R060P7XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}