{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA50R650CE","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA50R650CE","canonicalUrl":"https://icboms.com/infineon/IPA50R650CE","factsUrl":"https://icboms.com/api/mcp/products/IPA50R650CE","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA50R650CE, N-Channel MOSFET, 500 V Vdss, 650 mOhm Rds(on) at 1.8 A, 13 V gate drive, 6.1 A Id, PG-TO220-FP through-hole package, -40°C to 150°C junction temperature.","salesMarkdown":"The Infineon IPA50R650CE is a 500 V N-channel CoolMOS power MOSFET in a PG-TO220-FP full-pack through-hole package. It is designed for hard-switching topologies such as flyback and PFC stages in off-line AC-DC converters, where the 650 mOhm typical on-resistance and 15 nC gate charge keep conduction and switching losses manageable at moderate power levels. The 500 V drain-source voltage rating (Vdss) places this part in the 500 V class, suitable for bulk-capacitor voltages in universal-input (85–265 VAC) offline supplies with adequate derating for switching transients. The 650 mOhm Rds(on) is specified at 1.8 A drain current with a 13 V gate drive — note that the drive voltage is 13 V, not the more common 10 V; a gate-drive supply of at least 13 V is needed to achieve the rated on-resistance. The 27.2 W power dissipation limit at case temperature sets the thermal budget — a heatsink with adequate thermal resistance is required for any continuous load above a few watts. Gate charge of 15 nC at 10 V is low, enabling fast switching transitions and reducing gate-drive losses in high-frequency converters. Input capacitance of 342 pF at 100 V Vds is moderate, keeping driver loading light. Sourcing is limited to the surplus and broker market, where inventory is finite and pricing reflects scarcity.","metaTitle":"Infineon IPA50R650CE CoolMOS N-Ch MOSFET, 500 V, 650 mOhm","metaDescription":"Infineon IPA50R650CE CoolMOS N-channel MOSFET, 500 V Vdss, 650 mOhm Rds(on), 6.1 A Id, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 150µA","Base Product Number":"IPA50R","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"650mOhm @ 1.8A, 13V","Power Dissipation (Max)":"27.2W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"342 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"6.1A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6200","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7af8796ee7eed59c7f6094de38c9f302.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IPA50R650CE?","answer":"The maximum on-resistance is 650 mOhm at 1.8 A drain current with a 13 V gate drive. At lower gate voltages the Rds(on) will be higher."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA50R650CE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA50R650CE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}