{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA50R380CEXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA50R380CEXKSA2","canonicalUrl":"https://icboms.com/infineon/IPA50R380CEXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPA50R380CEXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series N-channel MOSFET, 500 V drain-source, 380 mOhm Rds(on) at 3.2 A, 13 V, 6.3 A continuous drain current, TO-220-3 Full Pack through-hole package, -40°C to 150°C junction temperature.","salesMarkdown":"The IPA50R380CEXKSA2: The 380 mOhm maximum on-resistance at 3.2 A and 13 V gate drive determines conduction loss in the on-state. This translates to manageable switching losses in hard-switched topologies at frequencies up to the 100 kHz range, and a gate-drive circuit capable of sourcing a few hundred milliamps will handle the transition cleanly. Input capacitance (Ciss) is 584 pF at 100 V drain-source, a relatively low value that keeps the Miller plateau short and reduces the drive power needed. ## Package and mounting — TO-220 Full Pack The PG-TO220-3-FP (Full Pack) package has three through-hole leads and a fully isolated backside tab. No additional isolation pad is required when mounting to a heatsink, which reduces assembly steps and thermal resistance. Maximum power dissipation is 29.2 W at case temperature, limited by the junction-to-case thermal path. The through-hole mounting suits wave-solder or hand-solder assembly in prototype runs, rework, and low-to-medium volume production.","metaTitle":"Infineon IPA50R380CEXKSA2 CoolMOS CE N-Ch MOSFET, 500V","metaDescription":"Infineon IPA50R380CEXKSA2 CoolMOS CE N-channel MOSFET: 500V drain-source, 380mOhm Rds(on), 6.3A continuous drain current, TO-220 Full Pack, active.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 260µA","Base Product Number":"IPA50R380","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 3.2A, 13V","Power Dissipation (Max)":"29.2W (Tc)","Supplier Device Package":"PG-TO220-3-FP","Gate Charge (Qg) (Max) @ Vgs":"24.8 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"584 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"6.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8d8cc47c4f2f45c6d468ab5dacf83273.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPA50R380CEXKSA2?","answer":"Maximum on-resistance is 380 mOhm at a drain current of 3.2 A and a gate-source voltage of 13 V."},{"question":"Can IPA50R380CEXKSA2 be used in high-voltage switching applications?","answer":"Yes. The 500 V drain-to-source voltage rating and CoolMOS CE technology make it suitable for high-voltage switching stages such as PFC, flyback, and SMPS designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA50R380CEXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA50R380CEXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}