{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA50R280CEXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA50R280CEXKSA2","canonicalUrl":"https://icboms.com/infineon/IPA50R280CEXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPA50R280CEXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CoolMOS™ CE series, N-Channel MOSFET, 500 V Vdss, 7.5 A Id, 280 mOhm Rds(on), TO-220-3 Full Pack, Through Hole, Tube.","salesMarkdown":"## Gate drive and switching parasitics The IPA50R280CEXKSA2: Gate charge totals 32.6 nC at 10 V — low enough that many PWM controllers drive it directly without a buffer stage, though the ±20 V Vgs max leaves headroom for gate-drive overshoot on a 15 V rail. Input capacitance measures 773 pF at 100 V drain bias, which combined with the gate charge defines the turn-on delay and crossover loss at switching frequencies up to ~100 kHz in hard-switched topologies. ## Thermal and package constraints for board integration The junction temperature range spans -40°C to 150°C, covering industrial ambient conditions with margin for self-heating in a ventilated enclosure.","metaTitle":"Infineon IPA50R280CEXKSA2 CoolMOS CE N-Ch 500V 7.5A","metaDescription":"Infineon IPA50R280CEXKSA2 N-channel MOSFET, 500V Vdss, 7.5A Id, 280mOhm Rds(on), TO-220 Full Pack. Active production, ROHS3 compliant. Request a quote.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 350µA","Base Product Number":"IPA50R280","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 4.2A, 13V","Power Dissipation (Max)":"30.4W (Tc)","Supplier Device Package":"PG-TO220-3-FP","Gate Charge (Qg) (Max) @ Vgs":"32.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"773 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"7.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5100","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.78000","currency":"USD"},{"qty":10,"price":"$1.59900","currency":"USD"},{"qty":100,"price":"$1.28490","currency":"USD"},{"qty":500,"price":"$1.05568","currency":"USD"},{"qty":1000,"price":"$0.87972","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7c5fcca32f52b5622b97eb522a6fac42.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Will the IPA50R280CEXKSA2 drop in as a replacement for the IMZA65R027M1HXKSA1?","answer":"No — the IMZA65R027M1HXKSA1 is a 650 V CoolSiC MOSFET in a different package (TO-247) with a 34 mOhm Rds(on) and a 59 A current rating. The IPA50R280CEXKSA2 is a 500 V silicon CoolMOS device in a TO-220 Full Pack. The voltage class, package footprint, and gate-drive voltage (13 V vs 18 V) are incompatible without a board spin and recharacterization."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA50R280CEXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA50R280CEXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}