{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA50R190CEXKSA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA50R190CEXKSA2","canonicalUrl":"https://icboms.com/infineon/IPA50R190CEXKSA2","factsUrl":"https://icboms.com/api/mcp/products/IPA50R190CEXKSA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPA50R190CEXKSA2, N-channel MOSFET, 500V Vdss, 18.5A Id, 190mOhm Rds(on) at 13V drive, TO-220-3 Full Pack, -40°C to 150°C junction temperature.","salesMarkdown":"The 190 mOhm maximum on-resistance at 13 V gate drive and 6.2 A Id targets hard-switching topologies like power-factor correction stages, flyback converters, and two-switch forward designs where 500 V blocking is needed and conduction loss matters. The 190 mOhm Rds(on) at 13 V drive and 6.2 A Id sets the conduction loss floor. At 6 A load, expect roughly 7 W dissipation from the channel alone, which the 32 W package limit can handle with adequate heatsinking. The gate charge of 47.2 nC at 10 V is moderate — a standard gate-driver IC can switch it at 50–100 kHz without excessive drive loss. Input capacitance of 1137 pF at 100 V Vds keeps the Miller plateau manageable, so you are not forced into a high-current gate driver for moderate frequencies. ## TO-220 Full Pack — rework and mounting notes The PG-TO220-FP is a through-hole full-pack with the drain tab fully encapsulated. No exposed metal on the back means no mica washer or sil-pad needed — bolt it straight to the heatsink with a screw and a spring washer.","metaTitle":"Infineon IPA50R190CEXKSA2 N-Channel MOSFET, 500V, 190mOhm","metaDescription":"Infineon CoolMOS CE N-channel MOSFET, 500V Vdss, 18.5A Id, 190mOhm Rds(on), TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 510µA","Base Product Number":"IPA50R190","Operating Temperature":"-40°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 6.2A, 13V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"47.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1137 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"18.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/43f4f71498a8a422797a9444dc39e4fb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPA50R190CEXKSA2?","answer":"The maximum on-resistance is 190 mOhm at 13 V gate drive and 6.2 A drain current. This is the key spec for estimating conduction loss in your power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA50R190CEXKSA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA50R190CEXKSA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}