{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA50R190CE","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA50R190CE","canonicalUrl":"https://icboms.com/infineon/IPA50R190CE","factsUrl":"https://icboms.com/api/mcp/products/IPA50R190CE","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPA50R190CE, N-Channel Super Junction MOSFET, 500 V Vdss, 190 mOhm Rds(on) max, 18.5 A continuous drain, PG-TO220-FP (TO-220 Full Pack) through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 500 V super-junction MOSFET for high-voltage switching stages The Infineon IPA50R190CE is a CoolMOS™ series N-channel super-junction MOSFET rated for 500 V drain-source breakdown and 190 mOhm maximum on-resistance at 6.2 A with a 13 V gate drive. Gate charge is 47.2 nC at 10 V, and input capacitance is 1137 pF at 100 V drain-source. If your design can tolerate a parametric alternative, a same-series CoolMOS™ part with similar voltage and on-resistance may be considered — but there is no pin-compatible drop-in designated by Infineon. ## 190 mOhm Rds(on) and 13 V gate-drive requirement At lower gate voltages the resistance rises significantly — the 3.5 V threshold (max at 510 µA) is not a logic-level turn-on; this part expects a dedicated 10–13 V gate-drive rail. ## TO-220 Full Pack — isolated tab, no extra hardware The PG-TO220-FP (Full Pack) package has the backside tab fully encapsulated in epoxy, electrically isolating it from the die. The trade-off is higher thermal resistance compared to a standard TO-220 with an exposed metal tab; the 32 W power dissipation limit reflects that. For designs pushing near that ceiling, ensure adequate airflow or a larger heatsink.","metaTitle":"Infineon IPA50R190CE CoolMOS™ N-Ch 500V 190mOhm TO-220 Full","metaDescription":"Infineon IPA50R190CE CoolMOS™ super-junction N-channel MOSFET, 500V, 190mOhm, 18.5A, TO-220 Full Pack.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Super Junction","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 510µA","Base Product Number":"IPA50R","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 6.2A, 13V","Power Dissipation (Max)":"32W (Tc)","Supplier Device Package":"PG-TO220-FP","Gate Charge (Qg) (Max) @ Vgs":"47.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1137 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"18.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7000","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d77194ad74275ca628b47e93aed70da5.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA50R190CE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA50R190CE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}