{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA126N10N3G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA126N10N3G","canonicalUrl":"https://icboms.com/infineon/IPA126N10N3G","factsUrl":"https://icboms.com/api/mcp/products/IPA126N10N3G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™3 IPA126N10N3G, N-Channel MOSFET, 100 V Vdss, 35 A Id, 12.6 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, Through Hole, -55 to 175 °C.","salesMarkdown":"## Gate drive and switching — 35 nC total gate charge Total gate charge is 35 nC at 10 V, so a 1 A gate driver charges the gate in about 35 ns — fast enough for hard-switched converters up to a few hundred kHz. The input capacitance is 2500 pF at 50 V drain, which is moderate for a 100 V device and keeps the driver current requirement manageable. The threshold voltage range is 3.5 V max at 45 µA drain current, and the recommended drive voltage is 6 V to 10 V for the lowest Rds(on). A 5 V logic-level gate drive will not fully enhance this part — plan for a 10 V rail or a gate-driver IC. ## Package and thermal — TO-220 Full Pack, 33 W dissipation The IPA126N10N3G comes in a TO-220-3 Full Pack (PG-TO220-3-111), which has a fully isolated metal tab — no insulating pad needed, but the thermal resistance is higher than a standard TO-220. The 33 W power dissipation limit at case temperature means a heatsink is required for any continuous current above about 10 A, depending on ambient and airflow.","metaTitle":"Infineon IPA126N10N3G N-Channel MOSFET, 100 V, 35 A","metaDescription":"Infineon OptiMOS™3 N-channel MOSFET, 100 V, 35 A, 12.6 mOhm Rds(on) at 10 V. TO-220 Full Pack, active production.","metaKeywords":null},"attributes":{"series":"OptiMOS™3","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"OptiMOS™3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 45µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"12.6mOhm @ 35A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7500","stockQuantity":0,"priceTiers":[{"qty":399,"price":"$0.75000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2c732fd9bf3bf1cc2f2921bb5dd9d19c.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does IPA126N10N3G require a heat sink?","answer":"Yes, for continuous operation above about 10 A drain current a heatsink is needed — the package is limited to 33 W dissipation at the case, and at 35 A the conduction loss alone is about 15.4 W."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA126N10N3G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA126N10N3G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}