{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA093N06N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA093N06N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPA093N06N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPA093N06N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ series, N-Channel MOSFET, 60 V drain-source, 9.3 mOhm Rds(on) at 40 A, 10 V gate drive, 43 A continuous drain, TO-220-3 Full Pack, -55°C to 175°C junction temperature.","salesMarkdown":"## TO-220 Full Pack — isolated package for simplified thermal management This saves assembly time and reduces thermal resistance path length, though the 33 W power dissipation ceiling at case temperature means the designer should verify the junction temperature stays within the -55°C to 175°C range under worst-case load. The through-hole mounting suits point-of-load regulators and motor-drive boards where vibration resistance and manual rework are priorities.","metaTitle":"Infineon IPA093N06N3GXKSA1 N-Channel MOSFET, 60 V, 9.3 mOhm","metaDescription":"Infineon OptiMOS N-channel MOSFET, 60 V drain-source, 9.3 mOhm Rds(on) at 40 A, 10 V gate. TO-220 Full Pack, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"NRND","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Not For New Designs","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 34µA","Base Product Number":"IPA093","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"9.3mOhm @ 40A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"PG-TO220-3-31","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3900 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"43A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.2500","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPA093N06N3GXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the recommended replacement for IPA093N06N3GXKSA1?","answer":"Infineon does not list a direct successor order code in the available records. For a new design, the procurement team should cross-reference the OptiMOS family for a 60 V, 9 mOhm-class N-channel MOSFET in a TO-220 Full Pack with an active lifecycle status. A parametric search on drain-source voltage, Rds(on), and package will yield the closest active alternative."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA093N06N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA093N06N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}