{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPA057N08N3G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPA057N08N3G","canonicalUrl":"https://icboms.com/infineon/IPA057N08N3G","factsUrl":"https://icboms.com/api/mcp/products/IPA057N08N3G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™3 series, IPA057N08N3G, N-Channel MOSFET, 80 V Vdss, 60 A Id, 5.7 mOhm Rds(on) at 10 V, 69 nC Qg, TO-220-3 Full Pack, -55 to 175 °C.","salesMarkdown":"## 80 V, 5.7 mOhm — the switching-loss floor ## Full-pack isolation — one fewer assembly step The PG-TO220-3-111 full-pack package (TO-220 Full Pack) provides electrical isolation between the tab and the heatsink, so no insulating washer or pad is needed. The through-hole mounting suits point-of-load regulators, motor-drive output stages, and industrial power supplies where the board sees vibration.","metaTitle":"Infineon IPA057N08N3G N-Channel MOSFET, 80 V, 5.7 mOhm","metaDescription":"Infineon IPA057N08N3G OptiMOS 3 N-channel MOSFET: 80 V Vdss, 60 A Id, 5.7 mOhm Rds(on), 69 nC gate charge. TO-220 Full Pack, active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"OptiMOS™3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 90µA","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"5.7mOhm @ 60A, 10V","Power Dissipation (Max)":"39W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"69 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"4750 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/bcd9e9fc75ef35499a5d20ea7d4444dd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPA057N08N3G/alternatives.json"},"ai":{"faq":[{"question":"What are the Rds(on) and gate charge of IPA057N08N3G?","answer":"Maximum on-resistance is 5.7 mOhm at 60 A drain current with 10 V gate drive. Total gate charge is 69 nC at 10 V. These two numbers define the conduction and switching losses in a hard-switched design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPA057N08N3G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPA057N08N3G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}