{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZA65R057M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZA65R057M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZA65R057M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZA65R057M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, IMZA65R057M1HXKSA1, N-Channel SiCFET, 650 V Vdss, 35 A Id, 74 mOhm Rds(on) @ 16.7 A, 18 V, 28 nC Qg, PG-TO247-4-3, -55°C to 175°C.","salesMarkdown":"## 650 V CoolSiC™ — switching losses and thermal budget The 74 mOhm maximum on-resistance is specified at 16.7 A with an 18 V gate drive — the recommended drive voltage for minimum Rds(on). Gate charge totals 28 nC at 18 V, and input capacitance measures 930 pF at 400 V drain bias. These numbers place it in the fast-switching tier for a 650 V SiC FET — the driver sees a light capacitive load, which keeps crossover losses low in hard-switched topologies like totem-pole PFC or LLC converters. ## Junction temperature and package — the 175°C ceiling That extra headroom matters in sealed enclosures or high-ambient power stages where the thermal interface is the limiting path. The TO-247-4 package (PG-TO247-4-3) adds a Kelvin source pin — the fourth pin separates the gate-drive return from the power current path, which eliminates the common-source inductance that slows switching in standard three-pin TO-247 parts. Power dissipation is rated at 133 W at case temperature. The through-hole mounting suits bolted heatsink attachment; the large tab area couples well to a thermal pad or direct-contact heatsink.","metaTitle":"Infineon IMZA65R057M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET","metaDescription":"Infineon CoolSiC™ IMZA65R057M1HXKSA1 SiC MOSFET, 650 V, 35 A, 74 mOhm Rds(on), TO-247-4, -55°C to 175°C.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -2V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 5mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"74mOhm @ 16.7A, 18V","Power Dissipation (Max)":"133W (Tc)","Supplier Device Package":"PG-TO247-4-3","Gate Charge (Qg) (Max) @ Vgs":"28 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"930 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.31","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$12.31000","currency":"USD"},{"qty":10,"price":"$10.84500","currency":"USD"},{"qty":100,"price":"$9.37940","currency":"USD"},{"qty":500,"price":"$8.50010","currency":"USD"},{"qty":1000,"price":"$7.79665","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4770dd3cbeeea61602cae904b3c6e09e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IMZA65R057M1HXKSA1 a SiC MOSFET?","answer":"Yes, it is a silicon carbide (SiC) N-channel MOSFET from Infineon's CoolSiC™ series, using SiCFET technology."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZA65R057M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZA65R057M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}