{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZA65R030M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZA65R030M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZA65R030M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZA65R030M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™, IMZA65R030M1HXKSA1, N-Channel SiCFET, 650 V Vdss, 42 mOhm Rds(on) @ 29.5 A, 18 V, 53 A continuous drain, 48 nC gate charge, TO-247-4 through-hole, -55°C to 175°C junction.","salesMarkdown":"## 650 V SiC FET for hard-switched power stages The Infineon IMZA65R030M1HXKSA1 is a CoolSiC™ N-channel silicon carbide MOSFET in a TO-247-4 through-hole package. It is built for high-efficiency, hard-switched power conversion where the 650 V drain-source rating provides margin on a 400 V DC bus — typical in three-phase motor drives, EV onboard chargers, and industrial power supplies. ## Conduction and switching losses at the design point Rds(on) is specified at 42 mOhm maximum with a 29.5 A drain current and 18 V gate drive — the 18 V drive voltage is the recommended operating point for minimum on-resistance. At 53 A continuous drain current (Tc=25°C), the conduction loss at 42 mOhm is about 118 W, which stays within the 197 W power dissipation limit at the case temperature. Gate charge is 48 nC at 18 V. Input capacitance is 1643 pF at 400 V drain-source. ## Thermal headroom and junction rating The 175°C maximum allows the part to run hot in a sealed enclosure or under-hood environment without derating the current below the 53 A continuous rating — provided the case temperature is managed to keep Tj within limits.","metaTitle":"IMZA65R030M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET, 650 V","metaDescription":"IMZA65R030M1HXKSA1 CoolSiC™ SiC MOSFET, N-channel, 650 V Vdss, 42 mOhm Rds(on) at 18 V, 53 A continuous drain, TO-247-4 through-hole.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -2V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 8.8mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"42mOhm @ 29.5A, 18V","Power Dissipation (Max)":"197W (Tc)","Supplier Device Package":"PG-TO247-4-3","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1643 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"53A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$19.37","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$23.03000","currency":"USD"},{"qty":10,"price":"$21.24000","currency":"USD"},{"qty":100,"price":"$18.13780","currency":"USD"},{"qty":500,"price":"$16.46718","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9b75d5293094ab1b1f840150092dae32.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can IMZA65R030M1HXKSA1 replace a standard silicon MOSFET in a 400 V bus design?","answer":"Yes — the 650 V Vdss and 42 mOhm Rds(on) make it a direct drop-in for many 600-650 V silicon MOSFET sockets, but the gate drive must be set to 18 V (not the typical 10-12 V for Si) to achieve the rated on-resistance. The TO-247-4 footprint is the same as a standard TO-247, so the PCB layout does not change."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZA65R030M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZA65R030M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}