{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZA65R027M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZA65R027M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZA65R027M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZA65R027M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, IMZA65R027M1HXKSA1, N-Channel SiC MOSFET, 650 V drain-source, 34 mOhm Rds(on) at 18 V gate drive, 59 A continuous drain, TO-247-4 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## Package and mounting — the TO-247-4 advantage The TO-247-4 package (supplier device code PG-TO247-4-3) is a through-hole footprint with four pins: gate, Kelvin source, drain, and power source. The Kelvin source pin lets the gate-drive return connect directly to the source sense point inside the package, bypassing the common-source inductance that plagues standard TO-247-3 layouts. For a SiC MOSFET switching at high di/dt, this pin can mean the difference between a clean gate waveform and oscillation. Mounting is standard through-hole on a TO-247 footprint — the fourth pin sits between the gate and the existing source pin, so the PCB layout needs a small adjustment from a three-pin pattern. It is ROHS3 compliant.","metaTitle":"IMZA65R027M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET, 650 V","metaDescription":"IMZA65R027M1HXKSA1 CoolSiC™ N-Channel SiC MOSFET, 650 Vdss, 34 mOhm Rds(on) at 18 V, 59 A continuous drain, TO-247-4 package.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 11mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"34mOhm @ 38.3A, 18V","Power Dissipation (Max)":"189W (Tc)","Supplier Device Package":"PG-TO247-4-3","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"2131 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"59A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$20.88","priceTiers":[{"qty":1,"price":"$20.88000","currency":"USD"},{"qty":10,"price":"$18.55200","currency":"USD"},{"qty":100,"price":"$16.22600","currency":"USD"},{"qty":500,"price":"$13.84614","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3366c3c83133cf62cc4d9e5125f798f2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IMZA65R027M1HXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What are equivalent parts for IMZA65R027M1HXKSA1?","answer":"The IPD50R950CEAUMA1 is a different class of device — a 500 V CoolMOS™ CE silicon MOSFET in a surface-mount package with 950 mOhm Rds(on) and 4.3 A continuous drain. It is not a functional equivalent for the 650 V, 34 mOhm SiC IMZA65R027M1HXKSA1. For a true SiC equivalent, look at other CoolSiC™ TO-247-4 parts in the same voltage and Rds(on) range."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZA65R027M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZA65R027M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}