{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZA120R040M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZA120R040M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZA120R040M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZA120R040M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CoolSiC™ series, N-Channel SiCFET, IMZA120R040M1HXKSA1, 1200 Vdss, 55 A Id, 54.4 mOhm Rds(on), TO-247-4, Through Hole, Tube.","salesMarkdown":"## 1200 V SiC FET for hard-switching power stages The IMZA120R040M1HXKSA1: The 39 nC gate charge at 18 V gate drive keeps the driver burden moderate for a 1200 V class part — a 2 A gate driver charges the gate in roughly 20 ns, enabling switching frequencies in the tens of kilohertz without excessive driver power. The TO-247-4 package (PG-TO247-4-8) with the Kelvin source pin separates the power loop from the gate drive loop, reducing the common-source inductance that otherwise slows turn-off in a standard three-lead TO-247. ## Thermal and switching parametric envelope The junction temperature range spans -55 °C to 175 °C, with 227 W power dissipation at the case — the limiting factor in a real layout is the heatsink-to-ambient thermal resistance, not the die itself. The gate drive range is specified for 15 V to 18 V for rated Rds(on) — 18 V yields the lowest on-resistance, while 15 V reduces gate-drive loss at the cost of slightly higher conduction loss. The maximum gate voltage is +20 V and -5 V, so a standard +15 V / -5 V drive rail stays within the absolute maximum without a clamp.","metaTitle":"Infineon IMZA120R040M1HXKSA1 CoolSiC™ N-Channel SiCFET","metaDescription":"Infineon IMZA120R040M1HXKSA1 CoolSiC™ N-Channel SiCFET, 1200 Vdss, 55 A continuous drain, 54.4 mOhm Rds(on), TO-247-4, active production, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Microcontrollers & Processors (MCU / MPU / DSP)"],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.2V @ 8.3mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"54.4mOhm @ 19.3A, 18V","Power Dissipation (Max)":"227W (Tc)","Supplier Device Package":"PG-TO247-4-8","Gate Charge (Qg) (Max) @ Vgs":"39 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"1620 nF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"15V, 18V","Current - Continuous Drain (Id) @ 25°C":"55A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$20.85","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$20.85000","currency":"USD"},{"qty":10,"price":"$18.36600","currency":"USD"},{"qty":100,"price":"$15.88400","currency":"USD"},{"qty":500,"price":"$14.39486","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/28942360e1ae2243e3d61fa9f14bb410.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZA120R040M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZA120R040M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}