{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZA120R020M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZA120R020M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZA120R020M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZA120R020M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ IMZA120R020M1HXKSA1 N-Channel SiCFET, 1200 V Vdss, 98 A Id, 26.9 mOhm Rds(on) @ 41 A, 18 V, 83 nC Qg, -55 to 175 °C, PG-TO247-4-8 through-hole.","salesMarkdown":"## 1200 V SiC FET for high-efficiency power conversion The IMZA120R020M1HXKSA1: It comes in a through-hole PG-TO247-4-8 package, the four-pin Kelvin-source variant that separates the gate-drive return from the power path for cleaner switching. The SiCFET technology gives you the fast, low-loss body diode of a wide-bandgap device without the reverse-recovery charge of a standard IGBT or superjunction MOSFET — useful in hard-switched bridge legs and totem-pole PFC stages. ## On-resistance and gate drive — the numbers that matter Maximum on-resistance is 26.9 mOhm at 41 A drain current with 18 V gate drive. The drive voltage range for rated Rds(on) is 15 V to 18 V, so plan your gate-drive supply accordingly — 15 V is the minimum to hit the low Rds(on) spec; 18 V is the recommended operating point. Gate charge is 83 nC at 18 V, which keeps gate-drive losses manageable even at high switching frequencies. Input capacitance is 3460 nF at 25 V drain-source — a figure that matters when sizing the gate-drive current for a given rise time. ## Thermal and environmental range Maximum power dissipation is 375 W at case temperature. The TO-247-4 through-hole package bolts directly to a heatsink — no reflow profile, no moisture sensitivity level to track. For a field-service kit, this is the kind of part you can swap on site with a screwdriver and a torque wrench, as long as the gate-drive board has the four-pin Kelvin-source footprint.","metaTitle":"Infineon IMZA120R020M1HXKSA1 CoolSiC™ N-Channel SiCFET","metaDescription":"Infineon IMZA120R020M1HXKSA1 CoolSiC™ N-Channel SiCFET, 1200 V drain-source, 26.9 mOhm Rds(on) at 41 A, 18 V drive, 98 A continuous drain, TO-247-4","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.2V @ 17.6mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"26.9mOhm @ 41A, 18V","Power Dissipation (Max)":"375W (Tc)","Supplier Device Package":"PG-TO247-4-8","Gate Charge (Qg) (Max) @ Vgs":"83 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"3460 nF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"15V, 18V","Current - Continuous Drain (Id) @ 25°C":"98A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$42.02","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$42.02000","currency":"USD"},{"qty":10,"price":"$38.75200","currency":"USD"},{"qty":100,"price":"$33.09120","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4de940dc30a645bf1ef8165cfa7eedce.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IMZA120R020M1HXKSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZA120R020M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZA120R020M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}