{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMZ120R090M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMZ120R090M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMZ120R090M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMZ120R090M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, N-channel SiCFET, IMZ120R090M1HXKSA1, 1200 V Vdss, 26 A continuous drain, 117 mOhm Rds(on), TO-247-4 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## Switching performance and parasitic numbers Input capacitance Ciss is 707 pF at 800 V Vds. The 117 mOhm Rds(on) at 8.5 A and 18 V is the number to use for conduction-loss calculations at full load. ## Through-hole TO-247-4 — field-swappable with basic tools The TO-247-4 package is through-hole, so it mounts into a PCB or a heatsink with two screws and a soldering iron. The fourth pin is the Kelvin-source connection.","metaTitle":"Infineon IMZ120R090M1HXKSA1 CoolSiC™ N-Ch SiCFET, 1200 V","metaDescription":"Infineon IMZ120R090M1HXKSA1 CoolSiC™ N-channel SiCFET, 1200 V, 26 A, 117 mOhm Rds(on), TO-247-4, active production. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -7V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-4","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 3.7mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"117mOhm @ 8.5A, 18V","Power Dissipation (Max)":"115W (Tc)","Supplier Device Package":"PG-TO247-4-1","Gate Charge (Qg) (Max) @ Vgs":"21 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"707 pF @ 800 V","Drive Voltage (Max Rds On, Min Rds On)":"15V, 18V","Current - Continuous Drain (Id) @ 25°C":"26A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$12.77","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$15.13000","currency":"USD"},{"qty":10,"price":"$13.90100","currency":"USD"},{"qty":100,"price":"$11.73990","currency":"USD"},{"qty":500,"price":"$10.50350","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8f181fea84548ad036bc7d896bae19ef.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IMZ120R090M1HXKSA1?","answer":"The maximum on-resistance is 117 mOhm at 8.5 A drain current with an 18 V gate drive."},{"question":"What is the pin configuration of IMZ120R090M1HXKSA1?","answer":"The TO-247-4 package has four pins: pin 1 is gate, pin 2 is source, pin 3 is the Kelvin-source connection, and pin 4 is the auxiliary source. The metal tab is the drain."},{"question":"What is the equivalent of IMZ120R090M1HXKSA1?","answer":"There is no direct pin-compatible second source listed for this part. The CoolSiC™ family includes other 1200 V devices in the same TO-247-4 footprint, but gate charge and Rds(on) differ — verify the specific rating against your design before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMZ120R090M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMZ120R090M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}