{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMW65R107M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMW65R107M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMW65R107M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMW65R107M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, IMW65R107M1HXKSA1, N-Channel SiCFET, 650 V drain-to-source, 20 A continuous drain, 15 nC gate charge, Through Hole TO-247-3, -55°C to 150°C junction temperature.","salesMarkdown":"With 15 nC gate charge at 18 V and input capacitance of 496 pF at 400 V drain bias, this SiCFET can be driven with modest gate-driver current while maintaining fast rise and fall edges. That combination matters in hard-switched topologies where crossover losses scale with switching frequency. The low Ciss at high blocking voltage is a signature of SiC trench technology — the device stores less charge in the output capacitance than a comparable super-junction MOSFET, so the energy lost per cycle in the output capacitance is lower. ## Temperature range and power dissipation Rated for junction temperatures from -55°C to 150°C, the IMW65R107M1HXKSA1 covers the full industrial and automotive under-hood temperature envelope. Maximum power dissipation is 75 W at case temperature. It is ROHS3 compliant.","metaTitle":"Infineon IMW65R107M1HXKSA1 CoolSiC™ N-Channel SiCFET, 650 V","metaDescription":"Infineon IMW65R107M1HXKSA1 CoolSiC™ trench SiCFET, 650 V, 20 A, 15 nC gate charge, TO-247-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Operating Temperature":"-55°C ~ 150°C (TJ)","Power Dissipation (Max)":"75W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"496 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$9.32148","priceTiers":[{"qty":1,"price":"$9.32148","currency":"USD"},{"qty":10,"price":"$8.02812","currency":"USD"},{"qty":30,"price":"$7.24068","currency":"USD"},{"qty":90,"price":"$6.57924","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e40432ebe7c9701f2ea0e4c7cf1b7323.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IMW65R107M1HXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the price of IMW65R107M1HXKSA1?","answer":"Pricing is quoted per order against an RFQ. No single price applies across all quantities and market conditions — request a quote for your volume."},{"question":"Is IMW65R107M1HXKSA1 available via RFQ confirmation?","answer":"Stock levels fluctuate. Submit an RFQ to check current availability and lead time for your required quantity."},{"question":"Is IMW65R107M1HXKSA1 suitable for high-frequency switching?","answer":"Yes. The low gate charge (15 nC at 18 V) and low input capacitance (496 pF at 400 V) support efficient hard-switched operation at frequencies where super-junction MOSFETs would incur higher losses."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMW65R107M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMW65R107M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-09-28T15:04:15.359Z","lastPublished":"2026-09-28T15:04:15.359Z","indexable":true}}