{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMW65R057M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMW65R057M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMW65R057M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMW65R057M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, IMW65R057M1HXKSA1, N-Channel SiCFET, 650 V Vds, 35 A Id, 74 mOhm Rds(on) at 18 V, 28 nC Qg, TO-247-3 through-hole, -55 to 175 °C junction.","salesMarkdown":"## 650 V SiC FET for hard-switched and resonant topologies The IMW65R057M1HXKSA1: With a maximum Rds(on) of 74 mOhm at 16.7 A and 18 V gate drive, and a gate charge of 28 nC, this part targets high-efficiency power conversion where switching losses dominate — PFC stages, LLC converters, and bidirectional DC-DC stages on a 400 V bus. The junction temperature range extends to 175 °C, giving thermal headroom over typical 150 °C-rated silicon MOSFETs in high-ambient or high-power-density enclosures. Conduction loss is set by the 74 mOhm maximum on-resistance at 18 V gate drive — this is the figure to use for worst-case thermal design. The 28 nC total gate charge at 18 V means the gate driver sees a moderate capacitive load. Input capacitance is 930 pF at 400 V drain bias, which sets the driver's peak current requirement and the miller plateau duration during hard switching.","metaTitle":"Infineon IMW65R057M1HXKSA1 CoolSiC™ N-Ch SiCFET, 650 V, 35 A","metaDescription":"Infineon CoolSiC™ N-channel SiCFET, 650 V drain, 35 A continuous, 74 mOhm Rds(on) at 18 V. Active lifecycle, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -2V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 5mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"74mOhm @ 16.7A, 18V","Power Dissipation (Max)":"133W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"28 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"930 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$11.68","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$11.68000","currency":"USD"},{"qty":10,"price":"$10.29200","currency":"USD"},{"qty":100,"price":"$8.90130","currency":"USD"},{"qty":500,"price":"$8.06676","currency":"USD"},{"qty":1000,"price":"$7.39917","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f621f3075f15a7df818d76f79831a84f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the Rds(on) and gate charge of IMW65R057M1HXKSA1?","answer":"Maximum Rds(on) is 74 mOhm at 16.7 A drain current with 18 V gate drive. Total gate charge is 28 nC at 18 V."},{"question":"Is IMW65R057M1HXKSA1 suitable for high-frequency switching?","answer":"Yes — the 28 nC gate charge and 930 pF input capacitance at 400 V bias are low enough for efficient switching in the 50–200 kHz range with a standard gate driver."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMW65R057M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMW65R057M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}