{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMW65R030M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMW65R030M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMW65R030M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMW65R030M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ IMW65R030M1HXKSA1, N-channel SiCFET, 650 V Vdss, 58 A Id, 42 mOhm Rds(on) @ 18 V, 48 nC Qg, -55 to 175 °C Tj, TO-247-3 through-hole, PG-TO247-3-41.","salesMarkdown":"## 650 V SiC FET in a TO-247-3 — what it brings to the power stage The Infineon IMW65R030M1HXKSA1 is a CoolSiC™ N-channel silicon carbide MOSFET rated for 650 V drain-source and 58 A continuous drain current at a 25°C case temperature. It comes in a through-hole TO-247-3 package (Infineon code PG-TO247-3-41), the standard three-lead power package that bolts to a heatsink or chassis. The 42 mOhm maximum on-resistance at an 18 V gate drive and 29.5 A drain current sets the conduction loss floor for the BOM. ## 175°C junction — the SiC thermal advantage The 197 W maximum power dissipation at the case temperature is the thermal budget for the design; the actual dissipation follows from the Rds(on) and the switching losses. ## Gate drive and switching — 48 nC Qg at 18 V The gate charge is 48 nC at an 18 V gate drive, which is the recommended drive voltage for the rated Rds(on). The input capacitance is 1643 pF at 400 V drain-source. The gate-source voltage is rated +20 V / -2 V, so the driver must not exceed that negative rail.","metaTitle":"Infineon IMW65R030M1HXKSA1 CoolSiC™ SiCFET, 650 V, 58 A","metaDescription":"Infineon IMW65R030M1HXKSA1 CoolSiC™ N-channel SiCFET, 650 V Vdss, 58 A Id, 42 mOhm Rds(on) at 18 V. Active lifecycle. TO-247-3 through-hole.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+20V, -2V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 8.8mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"42mOhm @ 29.5A, 18V","Power Dissipation (Max)":"197W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"48 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1643 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"58A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$18.82","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$18.82000","currency":"USD"},{"qty":10,"price":"$16.57800","currency":"USD"},{"qty":100,"price":"$14.33800","currency":"USD"},{"qty":500,"price":"$12.99378","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/99afb00301b078d0c3ecba8df6560d76.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMW65R030M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMW65R030M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}