{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMW120R060M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMW120R060M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMW120R060M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMW120R060M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, N-Channel SiCFET, 1200 V drain-source, 36 A continuous drain, 78 mOhm Rds(on) at 18 V gate drive, TO-247-3 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"## What this SiC FET is and where it fits The Infineon IMW120R060M1HXKSA1 is a 1200 V, 36 A N-channel silicon carbide (SiC) FET from the CoolSiC™ series, in a TO-247-3 through-hole package. It is designed for high-efficiency power conversion in applications like switch-mode power supplies, solar inverters, EV charging stations, and industrial motor drives where the 1200 V blocking voltage and low on-resistance reduce conduction and switching losses compared to silicon super-junction MOSFETs. The 78 mOhm Rds(on) at 18 V gate drive and 31 nC gate charge mean the gate driver sees a light load, keeping switching losses manageable at moderate frequencies. ## Package and mounting The TO-247-3 through-hole package with supplier device code PG-TO247-3-41 is a standard footprint for high-power through-hole devices. The three leads are gate, drain, and source — verify the pinout against your gate-driver layout before soldering. The 150 W power dissipation at case temperature assumes a properly heatsinked case; the thermal pad on the back of the package is the drain tab, so the heatsink must be electrically isolated or the system must tolerate the drain potential on the heatsink. ## Lifecycle and compliance The IMW120R060M1HXKSA1 is listed as Active and ROHS3 compliant. No last-time-buy or end-of-life notice is on record. For new designs, this part is a current-production choice with no near-term obsolescence risk. The CoolSiC™ series is Infineon's established SiC portfolio, so second-sourcing options are limited to other CoolSiC parts with similar Rds(on) and voltage class — the IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET, not a functional replacement for a 1200 V SiC FET.","metaTitle":"Infineon IMW120R060M1HXKSA1 CoolSiC N-Ch SiCFET, 1200 V","metaDescription":"Infineon IMW120R060M1HXKSA1 CoolSiC N-channel SiCFET, 1200 Vdss, 36 A Id, 78 mOhm Rds(on), TO-247-3. Active, ROHS3. Available to order.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -7V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 5.6mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"78mOhm @ 13A, 18V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"1060 pF @ 800 V","Drive Voltage (Max Rds On, Min Rds On)":"15V, 18V","Current - Continuous Drain (Id) @ 25°C":"36A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$14.15","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$14.15000","currency":"USD"},{"qty":10,"price":"$12.46200","currency":"USD"},{"qty":100,"price":"$10.77760","currency":"USD"},{"qty":500,"price":"$9.76718","currency":"USD"},{"qty":1000,"price":"$8.95887","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab93ed25d5ce1e18b3e8e77348c0b3db.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent or alternative to IMW120R060M1HXKSA1?","answer":"The IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET — it is not a functional equivalent for a 1200 V SiC FET. For a true alternative, look at other CoolSiC™ parts in the same voltage and Rds(on) class, such as the IMW120R060M1H (same die, different suffix)."},{"question":"How to drive IMW120R060M1HXKSA1 gate?","answer":"The recommended drive voltage range is 15 V to 18 V. The gate charge is 31 nC at 18 V, so a standard isolated gate driver with 2 A to 4 A peak output current will switch it effectively. The maximum gate-source voltage is +23 V and -7 V — stay within that window to avoid oxide damage."},{"question":"Is IMW120R060M1HXKSA1 compatible with TO247-3 footprint?","answer":"Yes, the package is TO-247-3 with supplier device code PG-TO247-3-41. It fits the standard TO-247-3 footprint. Verify the pinout (gate, drain, source) against your PCB layout before assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMW120R060M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMW120R060M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}