{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMW120R060M1HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMW120R060M1HXKSA1","canonicalUrl":"https://icboms.com/infineon/IMW120R060M1HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IMW120R060M1HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSiC™ series, N-Channel SiCFET, 1200 V drain-source, 36 A continuous drain, 78 mOhm Rds(on) at 18 V gate drive, TO-247-3 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"The Infineon IMW120R060M1HXKSA1 is a 1200 V, 36 A N-channel silicon carbide (SiC) FET from the CoolSiC™ series, in a TO-247-3 through-hole package. It is designed for high-efficiency power conversion in applications like switch-mode power supplies, solar inverters, EV charging stations, and industrial motor drives where the 1200 V blocking voltage and low on-resistance reduce conduction and switching losses compared to silicon super-junction MOSFETs. The 78 mOhm Rds(on) at 18 V gate drive and 31 nC gate charge mean the gate driver sees a light load, keeping switching losses manageable at moderate frequencies. The TO-247-3 through-hole package with supplier device code PG-TO247-3-41 is a standard footprint for high-power through-hole devices. The three leads are gate, drain, and source — verify the pinout against your gate-driver layout before soldering. For new designs, this part is a current-production choice with no near-term obsolescence risk. The CoolSiC™ series is Infineon's established SiC portfolio, so second-sourcing options are limited to other CoolSiC parts with similar Rds(on) and voltage class — the IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET, not a functional replacement for a 1200 V SiC FET.","metaTitle":"Infineon IMW120R060M1HXKSA1 CoolSiC N-Ch SiCFET, 1200 V","metaDescription":"Infineon IMW120R060M1HXKSA1 CoolSiC N-channel SiCFET, 1200 Vdss, 36 A Id, 78 mOhm Rds(on), TO-247-3. Active, ROHS3. Available to order.","metaKeywords":null},"attributes":{"series":"CoolSiC™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"CoolSiC™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"+23V, -7V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 5.6mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"78mOhm @ 13A, 18V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"PG-TO247-3-41","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 18 V","Drain to Source Voltage (Vdss)":"1200 V","Input Capacitance (Ciss) (Max) @ Vds":"1060 pF @ 800 V","Drive Voltage (Max Rds On, Min Rds On)":"15V, 18V","Current - Continuous Drain (Id) @ 25°C":"36A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$14.15","priceTiers":[{"qty":1,"price":"$14.15000","currency":"USD"},{"qty":10,"price":"$12.46200","currency":"USD"},{"qty":100,"price":"$10.77760","currency":"USD"},{"qty":500,"price":"$9.76718","currency":"USD"},{"qty":1000,"price":"$8.95887","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab93ed25d5ce1e18b3e8e77348c0b3db.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IMW120R060M1HXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the equivalent or alternative to IMW120R060M1HXKSA1?","answer":"The IPD50R950CEAUMA1 is a 500 V CoolMOS silicon MOSFET — it is not a functional equivalent for a 1200 V SiC FET. For a true alternative, look at other CoolSiC™ parts in the same voltage and Rds(on) class, such as the IMW120R060M1H (same die, different suffix)."},{"question":"How to drive IMW120R060M1HXKSA1 gate?","answer":"The recommended drive voltage range is 15 V to 18 V. The gate charge is 31 nC at 18 V, so a standard isolated gate driver with 2 A to 4 A peak output current will switch it effectively. The maximum gate-source voltage is +23 V and -7 V — stay within that window to avoid oxide damage."},{"question":"Is IMW120R060M1HXKSA1 compatible with TO247-3 footprint?","answer":"Yes, the package is TO-247-3 with supplier device code PG-TO247-3-41. It fits the standard TO-247-3 footprint. Verify the pinout (gate, drain, source) against your PCB layout before assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMW120R060M1HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMW120R060M1HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}