{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMBG65R260M1HXTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMBG65R260M1HXTMA1","canonicalUrl":"https://icboms.com/infineon/IMBG65R260M1HXTMA1","factsUrl":"https://icboms.com/api/mcp/products/IMBG65R260M1HXTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSIC M1 IMBG65R260M1HXTMA1, N-Channel SiCFET, 650 Vdss, 6 A continuous drain, 346 mOhm Rds(on) at 3.6 A, 18 V drive, PG-TO263-7-12, -55°C to 175°C junction.","salesMarkdown":"## 650 V SiC MOSFET for hard-switched power stages It is built for hard-switched power converters where the wide bandgap material buys lower switching losses than a comparable super-junction Si MOSFET. The 346 mOhm maximum on-resistance at 3.6 A and 18 V gate drive sets the conduction loss floor. With a gate charge of only 6 nC at 18 V, the drive energy per switching cycle is low, which keeps the gate-drive power supply small and the switching-node dv/dt manageable. ## 175°C junction — the thermal envelope The junction temperature range extends from -55°C to 175°C. That 175°C ceiling is 25°C higher than the typical 150°C limit of a silicon CoolMOS part like the IPD50R950CEAUMA1, which matters when the heatsink is sized for a high ambient or the load cycle pushes the die temperature above 150°C for sustained periods. Maximum power dissipation is 65 W at case temperature Tc. It is ROHS3 compliant and available through independent distribution. There is no official second-source or direct replacement from Infineon — the CoolSIC M1 is a proprietary SiC process, not a cross-licensed die. For dual-sourcing, evaluate a functionally similar SiC MOSFET from a different foundry, but confirm the gate-drive voltage (18 V nominal) and the pinout of the PG-TO263-7-12 footprint. ## Gate-drive and switching note The recommended drive voltage for minimum on-resistance is 18 V. Maximum gate-source ratings are +23 V and -5 V, so a standard 15 V or 18 V gate-drive supply with a negative turn-off rail (e.g. -3 V to -5 V) stays within the negative limit. The input capacitance Ciss is 201 pF at 400 V drain-source — the gate-drive current needed to charge and discharge that capacitance at the target switching frequency is modest, but the driver must source the peak current to switch the gate charge in the desired transition time.","metaTitle":"Infineon IMBG65R260M1HXTMA1 CoolSIC M1 SiC MOSFET, 650 V","metaDescription":"Infineon IMBG65R260M1HXTMA1 SiCFET, 650 Vdss, 6 A continuous, 346 mOhm Rds(on) at 3.6 A, 18 V drive. PG-TO263-7-12 package.","metaKeywords":null},"attributes":{"series":"CoolSIC™ M1","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSIC™ M1","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 1.1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"346mOhm @ 3.6A, 18V","Power Dissipation (Max)":"65W (Tc)","Supplier Device Package":"PG-TO263-7-12","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"201 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.5","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.50000","currency":"USD"},{"qty":10,"price":"$4.61700","currency":"USD"},{"qty":100,"price":"$3.73470","currency":"USD"},{"qty":500,"price":"$3.31976","currency":"USD"},{"qty":1000,"price":"$2.83534","currency":"USD"},{"qty":2000,"price":"$2.66977","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/346f45937dfbaf6ea11f47f6ce755f02.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the max junction temperature for IMBG65R260M1HXTMA1?","answer":"The maximum junction temperature is 175°C, which is 25°C higher than the typical 150°C limit of a silicon CoolMOS part. This extends the safe operating area in high-ambient or high-load-cycle applications."},{"question":"How does IMBG65R260M1HXTMA1 compare to a silicon MOSFET like IPD50R950CEAUMA1?","answer":"The IMBG65R260M1HXTMA1 is a SiC MOSFET with 650 V drain-source rating and 346 mOhm on-resistance, versus the IPD50R950CEAUMA1 which is a 500 V silicon CoolMOS with 950 mOhm on-resistance. The SiC part has a lower on-resistance per voltage class, a 175°C junction limit versus 150°C, and a lower gate charge (6 nC vs 10.5 nC) for faster switching. The trade-off is the higher gate-drive voltage requirement (18 V vs 10 V) and the proprietary SiC process — no direct pin-compatible second-source exists."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMBG65R260M1HXTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMBG65R260M1HXTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}