{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IMBG65R163M1HXTMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IMBG65R163M1HXTMA1","canonicalUrl":"https://icboms.com/infineon/IMBG65R163M1HXTMA1","factsUrl":"https://icboms.com/api/mcp/products/IMBG65R163M1HXTMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolSIC™ M1 SiCFET, N-Channel, 650 Vdss, 17 A continuous, 217 mOhm Rds(on) at 18 V, 10 nC gate charge, PG-TO263-7-12 package, -55 to 175 °C junction.","salesMarkdown":"## SiC MOSFET for 400 V bus hard-switching and resonant stages The IMBG65R163M1HXTMA1: The 217 mOhm maximum on-resistance at 18 V gate drive and 5.7 A sets the conduction loss baseline for a 400 V DC bus PFC or LLC converter stage. ## Switching loss budget — gate charge and capacitance Total gate charge is 10 nC at 18 V. Input capacitance measures 320 pF at 400 V drain-source bias. ## Package and thermal path The large exposed drain tab requires a soldered copper plane on the PCB for effective heat spreading — a two-layer board with minimal copper will bottleneck the thermal performance. ROHS3 compliant.","metaTitle":"Infineon IMBG65R163M1HXTMA1 CoolSIC™ M1 SiC MOSFET, 650 V","metaDescription":"Infineon IMBG65R163M1HXTMA1 CoolSIC™ M1 SiCFET: 650 Vdss, 17 A continuous, 217 mOhm Rds(on) at 18 V. Active production, PG-TO263-7-12. Quoted to order.","metaKeywords":null},"attributes":{"series":"CoolSIC™ M1","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolSIC™ M1","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+23V, -5V","Technology":"SiCFET (Silicon Carbide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.7V @ 1.7mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"217mOhm @ 5.7A, 18V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"PG-TO263-7-12","Gate Charge (Qg) (Max) @ Vgs":"10 nC @ 18 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"320 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"18V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.07","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$6.07000","currency":"USD"},{"qty":10,"price":"$5.19900","currency":"USD"},{"qty":100,"price":"$4.33250","currency":"USD"},{"qty":500,"price":"$3.82280","currency":"USD"},{"qty":1000,"price":"$3.44052","currency":"USD"},{"qty":2000,"price":"$3.22390","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1925829830797400fcde32f2ce928ca0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IMBG65R163M1HXTMA1?","answer":"Maximum on-resistance is 217 mOhm at 5.7 A drain current with 18 V gate drive. The 18 V drive voltage is specified for achieving the lowest Rds(on); operating at lower gate voltages will increase the on-resistance above the rated maximum."},{"question":"What package is IMBG65R163M1HXTMA1?","answer":"The supplier device package is PG-TO263-7-12, a surface-mount D²PAK variant with seven leads and an exposed drain tab."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IMBG65R163M1HXTMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IMBG65R163M1HXTMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}